Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF - Revision history

Jesyup: /* Photoresist adhesion */ formatting

2025-04-03T10:37:57Z

Photoresist adhesion: formatting

2025-04-03T10:37:04Z

Added section about photoresist adhesion

← Older revision		Revision as of 12:37, 3 April 2025
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	''Evgeniy Shkondin, DTU Nanolab, June 2019''		''Evgeniy Shkondin, DTU Nanolab, June 2019''

			=== Photoresist adhesion ===
			Experiments in April 2025 as shown bad adhesion of AZ 5214E on Al2O3. Total delamination occurred in less than 120 seconds on 50nm and 100nm of Al2O3 deposited using ALD.
			Thus wetetch is unsuitable to structure an Al2O3 for use as hard-mask for dryetching.
			<br>
			Systematic studies have not yet been done as of April 2025.

			<br>
			Following parameters were tested:

			{\| class="wikitable"
			\|+ Process parameters
			\|-
			!style="max-width:7em;"\| ALD Parameters
			\|\|
			* Cycles: 500 and 1000
			* TMA pulse: 0.1s
			* H2O pulse: 0.1s
			\|-
			!style="max-width:7em;"\| Lithography parameters
			\|\|
			* Pretreatment: HMDS
			* Resist type: AZ 5214E
			* Resist thickness: 1.5µm
			* Exposure parameters:
			** Tool: MLA3
			** Dose: 100 mJ/cm2
			** Defocus: 1
			** Mode: Fast
			* Development: TMAH, SP60
			* Post treatment: Hardbake 120s@120C
			\|}


			''Jesper Pan, DTU Nanolab, April 2025''

2023-02-06T14:37:38Z

← Older revision		Revision as of 16:37, 6 February 2023
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2019-08-27T08:04:47Z

← Older revision		Revision as of 10:04, 27 August 2019
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Aluminum_Oxide/Al2O3_Etch_using_HF click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide/Al2O3_Etch_using_HF click here]'''

2019-08-26T10:04:28Z

Experiment and results

← Older revision		Revision as of 12:04, 26 August 2019
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	=== Experiment and results ===		=== Experiment and results ===

	Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below.		Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer\|Ellipsometer VASE]], and the thickness as function of time has been plotted as shown in the graph below.

	<gallery caption="" widths="600px" heights="500px" perrow="1">		<gallery caption="" widths="600px" heights="500px" perrow="1">

2019-08-26T10:01:53Z

Experiment and results

← Older revision		Revision as of 12:01, 26 August 2019
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	The etch rates:		The etch rates:
	<ul>		<ul>
	<li> <p>5% HF → <b>1.74 nm/s</b> </p></li>		<li><p>5% HF → <b>1.74 nm/s</b></p></li>
	<li> 1vol. H<sub>2</sub>O : 1vol. 5% HF <b>1.05 nm/s</b> </li>		<li><p> 1vol. H<sub>2</sub>O : 1vol. 5% HF → <b>1.05 nm/s</b></p></li>
	<li> 2vol. H<sub>2</sub>O : 1vol. 5% HF <b>0.72 nm/s</b> </li>		<li><p> 2vol. H<sub>2</sub>O : 1vol. 5% HF → <b>0.72 nm/s</b></p></li>
	</ul>		</ul>

2019-08-26T10:00:29Z

Experiment and results

← Older revision		Revision as of 12:00, 26 August 2019
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	The etch rates:		The etch rates:
	<ul>		<ul>
	<li> 5% HF ~~<p>~~→~~</p>~~ <b>1.74 nm/s</b> </li>		<li> <p>5% HF → <b>1.74 nm/s</b> </p></li>
	<li> 1vol. H<sub>2</sub>O : 1vol. 5% HF <b>1.05 nm/s</b> </li>		<li> 1vol. H<sub>2</sub>O : 1vol. 5% HF <b>1.05 nm/s</b> </li>
	<li> 2vol. H<sub>2</sub>O : 1vol. 5% HF <b>0.72 nm/s</b> </li>		<li> 2vol. H<sub>2</sub>O : 1vol. 5% HF <b>0.72 nm/s</b> </li>

2019-08-26T09:59:58Z

Experiment and results

← Older revision		Revision as of 11:59, 26 August 2019
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	The etch rates:		The etch rates:
	<ul>		<ul>
	<li> 5% HF: <b>1.74 nm/s</b> </li>		<li> 5% HF <p>→</p> <b>1.74 nm/s</b> </li>
	<li> 1vol. H<sub>2</sub>O : 1vol. 5% HF <b>1.05 nm/s</b> </li>		<li> 1vol. H<sub>2</sub>O : 1vol. 5% HF <b>1.05 nm/s</b> </li>
	<li> 2vol. H<sub>2</sub>O : 1vol. 5% HF <b>0.72 nm/s</b> </li>		<li> 2vol. H<sub>2</sub>O : 1vol. 5% HF <b>0.72 nm/s</b> </li>

2019-08-26T09:58:05Z

Experiment and results

← Older revision		Revision as of 11:58, 26 August 2019
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	</ul>		</ul>

	Be aware of that the 5% HF etches quite fast - Actually so fast that it can be tricky to control the ~~etch. Just imagine, you take a~~ sample out of solution and ~~place~~ it in a bigger water container to rinse, and ~~during that movement,~~ the etch ~~continues… So~~ the handling things around the fumehood can be a source of errors.		Be aware of that the 5% HF etches quite fast. Actually, so fast that it can be tricky to control. Taking the sample out of the solution and placing it in a bigger water container to rinse, resulting a time delay due to the movement and the etch continues. It means the handling things around the fumehood can be a source of errors in this case.

	''Evgeniy Shkondin, DTU Nanolab, June 2019''		''Evgeniy Shkondin, DTU Nanolab, June 2019''

2019-08-26T09:54:30Z

Experiment and results

← Older revision		Revision as of 11:54, 26 August 2019
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	Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below.		Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below.

	<gallery caption="~~Attempt to dissolve Al<sub>2</sub>O<sub>3</sub> using HF.~~" widths="600px" heights="500px" perrow="1">		<gallery caption="" widths="600px" heights="500px" perrow="1">
	image:Al2O3_HF_20190826.png\| Different etching rates for different HF concentrations.		image:Al2O3_HF_20190826.png\| Different etching rates for different HF concentrations.
	</gallery>		</gallery>