Specific Process Knowledge/Etch/Aluminum Oxide - Revision history

Mbec at 13:45, 28 March 2025

2025-03-28T13:45:16Z

← Older revision		Revision as of 15:45, 28 March 2025
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	Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.		Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.

Rkch at 14:36, 6 February 2023

2023-02-06T14:36:57Z

← Older revision		Revision as of 16:36, 6 February 2023
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			'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''

			'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''

	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''

Rkch at 11:11, 3 September 2021

2021-09-03T11:11:04Z

← Older revision		Revision as of 13:11, 3 September 2021
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	Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.		Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
	Chemical etching can be done using HF (~~160nm~~/min) or a developer (4nm/min). This will be selective to most materials not containing Al.		Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.
	We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.		We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.

Rkch at 11:09, 3 September 2021

2021-09-03T11:09:08Z

← Older revision		Revision as of 13:09, 3 September 2021
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	Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.		Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
	Chemical etching can be done using HF or a developer~~. The last has not been tested~~. This will be selective to most materials not containing Al~~. Do expect a slow and isotropic etch rate of about 1-2 nm/min~~.		Chemical etching can be done using HF (160nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.
	We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.		We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.

Pevo at 12:31, 23 August 2019

2019-08-23T12:31:17Z

← Older revision		Revision as of 14:31, 23 August 2019
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''

	Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically and by dry etching. ~~We have not tested a chemical etch but a possibility could~~ be ~~to use~~ a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP. Please see links below.		Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
			Chemical etching can be done using HF or a developer. The last has not been tested. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min.
			We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.


	*[[/Al2O3 Etch with ICP Metal\|~~Al2O3~~ etch using ICP metal]]		*[[/Al2O3 Etch with ICP Metal\|Al<sub>2</sub>O<sub>3</sub> etch using ICP metal]]
	*[[/Al2O3 Etch with III-V ICP\|~~Al2O3~~ etch using III-V ICP]]		*[[/Al2O3 Etch with III-V ICP\|Al<sub>2</sub>O<sub>3</sub> etch using III-V ICP]]
			*[[/Al2O3 Etch using HF\|Al<sub>2</sub>O<sub>3</sub> etch using HF]]

Bghe at 06:10, 26 June 2019

2019-06-26T06:10:52Z

← Older revision		Revision as of 08:10, 26 June 2019
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''

	Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of ~~Al2O3~~ in dry etching. It has been mostly tested in the III-V ICP. Please see links below.		Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP. Please see links below.


	*[[/Al2O3 Etch with ICP Metal\|Al2O3 etch using ICP metal]]		*[[/Al2O3 Etch with ICP Metal\|Al2O3 etch using ICP metal]]
	*[[/Al2O3 Etch with III-V ICP\|Al2O3 etch using III-V ICP]]		*[[/Al2O3 Etch with III-V ICP\|Al2O3 etch using III-V ICP]]

Bghe at 06:10, 26 June 2019

2019-06-26T06:10:31Z

← Older revision		Revision as of 08:10, 26 June 2019
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''

	Etching ~~Al2O3~~ can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.		Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.


	*[[/Al2O3 Etch with ICP Metal\|Al2O3 etch using ICP metal]]		*[[/Al2O3 Etch with ICP Metal\|Al2O3 etch using ICP metal]]
	*[[/Al2O3 Etch with III-V ICP\|Al2O3 etch using III-V ICP]]		*[[/Al2O3 Etch with III-V ICP\|Al2O3 etch using III-V ICP]]

Bghe at 09:55, 29 June 2017

2017-06-29T09:55:02Z

← Older revision		Revision as of 11:55, 29 June 2017
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	Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.		Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.
	~~=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png\|200px]]=~~



	*[[/Al2O3 Etch with ICP Metal\|Al2O3 etch using ICP metal]]		*[[/Al2O3 Etch with ICP Metal\|Al2O3 etch using ICP metal]]
	*[[/Al2O3 Etch with III-V ICP\|Al2O3 etch using III-V ICP]]		*[[/Al2O3 Etch with III-V ICP\|Al2O3 etch using III-V ICP]]

Bghe at 09:54, 29 June 2017

2017-06-29T09:54:45Z

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''
+Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.
 =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
 *[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
 *[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]

Bghe at 09:26, 27 June 2017

2017-06-27T09:26:54Z

@@ Line 3: / Line 3: @@
 =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
 *[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
 *[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]