Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch) - Revision history

Mmat at 14:31, 16 June 2025

2025-06-16T14:31:22Z

← Older revision		Revision as of 16:31, 16 June 2025
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			{{Contentbydryetch}}

	'''Feedback to this page''': '''[mailto:labadviser@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.Nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch) click here]'''		'''Feedback to this page''': '''[mailto:labadviser@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.Nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch) click here]'''

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	[[Category: Etch (Dry) Equipment\|ASE]]		[[Category: Etch (Dry) Equipment\|ASE]]
	<!--Checked for updates on 28/6-2023 - ok/jmli -->		<!--Checked for updates on 28/6-2023 - ok/jmli -->

	~~{{Contentbydryetch}}~~

	= The ASE =		= The ASE =

Mfarin: /* Process information */

2023-09-01T08:15:05Z

Process information

← Older revision		Revision as of 10:15, 1 September 2023
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	*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE\|Etch of Silicon using ASE]]		*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE\|Etch of Silicon using ASE]]
	*[[Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE\|Etch of polymers using ASE]]		*[[Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE\|Etch of polymers using ASE]]
	*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE\|Etch of SiO2 using ASE]]		*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE\|Etch of SiO2/SiN using ASE]]

	==An overview of the performance of the ASE and some process related parameters==		==An overview of the performance of the ASE and some process related parameters==

Jmli at 10:09, 28 June 2023

2023-06-28T10:09:31Z

← Older revision		Revision as of 12:09, 28 June 2023
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	[[Category: Etch (Dry) Equipment\|ASE]]		[[Category: Etch (Dry) Equipment\|ASE]]
	<!--Checked for updates on 28/6-2023 - ok/jmli -->		<!--Checked for updates on 28/6-2023 - ok/jmli -->

			{{Contentbydryetch}}

	= The ASE =		= The ASE =

Jmli at 10:03, 28 June 2023

2023-06-28T10:03:45Z

← Older revision		Revision as of 12:03, 28 June 2023
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	= The ASE =		= The ASE =

	[[image:ASE.jpg\|300x300px\|right\|thumb\|STS ASE - positioned in cleanroom B-1]]		[[image:ASE.jpg\|300x300px\|right\|thumb\|STS ASE - positioned in cleanroom B-1. {{photo1}} ]]

	Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br>		Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br>

Jmli at 08:28, 28 June 2023

2023-06-28T08:28:29Z

← Older revision		Revision as of 10:28, 28 June 2023
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	[[Category: Equipment \|Etch ASE]]		[[Category: Equipment \|Etch ASE]]
	[[Category: Etch (Dry) Equipment\|ASE]]		[[Category: Etch (Dry) Equipment\|ASE]]
			<!--Checked for updates on 28/6-2023 - ok/jmli -->


	= The ASE =		= The ASE =
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	Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br>		Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br>
	Vendor: STS (now SPTS) <br>		Vendor: STS (now SPTS) <br>
	The ASE was the first ICP (Inductively coupled plasma) tool at DTU Nanolab. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine ~~during the summer in 2017~~ to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.		The ASE was the first ICP (Inductively coupled plasma) tool at DTU Nanolab. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.

Jmli at 14:26, 25 November 2019

2019-11-25T14:26:44Z

← Older revision		Revision as of 16:26, 25 November 2019
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch) click here]'''		'''Feedback to this page''': '''[mailto:labadviser@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.Nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch) click here]'''

	[[Category: Equipment \|Etch ASE]]		[[Category: Equipment \|Etch ASE]]
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	Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br>		Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br>
	Vendor: STS (now SPTS) <br>		Vendor: STS (now SPTS) <br>
	The ASE was the first ICP (Inductively coupled plasma) tool at ~~Danchip~~. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine during the summer in 2017 to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.		The ASE was the first ICP (Inductively coupled plasma) tool at DTU Nanolab. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine during the summer in 2017 to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.


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	'''The user manual, quality control procedure and results, user APV(s), technical information and contact information can be found in LabManager:'''		'''The user manual, quality control procedure and results, user APV(s), technical information and contact information can be found in LabManager:'''

	Equipment info in [http://labmanager~~.danchip~~.dtu.dk/function.php?module=Machine&view=view&mach=105\| LabManager]		Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=105\| LabManager]

	==Process information==		==Process information==

Bghe: /* The ASE */

2018-05-08T07:20:31Z

The ASE

← Older revision		Revision as of 09:20, 8 May 2018
Line 10:		Line 10:
	[[image:ASE.jpg\|300x300px\|right\|thumb\|STS ASE - positioned in cleanroom B-1]]		[[image:ASE.jpg\|300x300px\|right\|thumb\|STS ASE - positioned in cleanroom B-1]]

			Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br>
			Vendor: STS (now SPTS) <br>
	The ASE was the first ICP (Inductively coupled plasma) tool at Danchip. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine during the summer in 2017 to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.		The ASE was the first ICP (Inductively coupled plasma) tool at Danchip. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine during the summer in 2017 to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.

Bghe: /* Process information */

2018-01-24T07:57:23Z

Process information

← Older revision		Revision as of 09:57, 24 January 2018
Line 23:		Line 23:
	*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE\|Etch of Silicon using ASE]]		*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE\|Etch of Silicon using ASE]]
	*[[Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE\|Etch of polymers using ASE]]		*[[Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE\|Etch of polymers using ASE]]
			*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE\|Etch of SiO2 using ASE]]

	==An overview of the performance of the ASE and some process related parameters==		==An overview of the performance of the ASE and some process related parameters==

Bghe: /* An overview of the performance of the ASE and some process related parameters */

2018-01-24T07:48:25Z

An overview of the performance of the ASE and some process related parameters

← Older revision		Revision as of 09:48, 24 January 2018
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	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1 6" wafer per run (requires hardware change)
	*1 4" wafer per run		*1 4" wafer per run
	*1 2" wafer per run (requires carrier)		*1 2" wafer per run (requires carrier)

Bghe: /* The ASE */

2018-01-24T07:47:45Z

The ASE

← Older revision		Revision as of 09:47, 24 January 2018
Line 8:		Line 8:
	= The ASE =		= The ASE =

	[[image:ASE.jpg\|300x300px\|right\|thumb\|~~The ICP-DRIE tool at Danchip:~~ STS ASE - positioned in cleanroom B-1]]		[[image:ASE.jpg\|300x300px\|right\|thumb\|STS ASE - positioned in cleanroom B-1]]

	The ASE was the first ICP (Inductively coupled plasma) tool at Danchip. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine during the summer in 2017 to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.		The ASE was the first ICP (Inductively coupled plasma) tool at Danchip. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus\|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine during the summer in 2017 to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere.