Specific Process Knowledge/Doping - Revision history

Mmat at 13:47, 12 February 2025

2025-02-12T13:47:08Z

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	== Doping your wafer ==		== Doping your wafer ==

Paphol at 09:00, 31 January 2023

2023-01-31T09:00:10Z

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	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''

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	== Doping your wafer ==		== Doping your wafer ==

Paphol at 08:59, 31 January 2023

2023-01-31T08:59:41Z

← Older revision		Revision as of 10:59, 31 January 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Doping click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Doping click here]'''
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Jmli: /* Comparison of different doping processes */

2019-11-26T07:59:40Z

Comparison of different doping processes

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	\|Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch.		\|Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch.
	\|Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing.		\|Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing.
	\|Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at ~~Danchip~~ but IBS (Ion Beam Services) offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm. When wafers return from Ion implantation they need a clean before entering the cleanroom. Activation and redistribution of the dopants is required and is done by a high temperature anneal (600°C-1000°C) in the high temperature furnaces or by rapid thermal anneal.		\|Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at Nanolab but IBS (Ion Beam Services) offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm. When wafers return from Ion implantation they need a clean before entering the cleanroom. Activation and redistribution of the dopants is required and is done by a high temperature anneal (600°C-1000°C) in the high temperature furnaces or by rapid thermal anneal.
	\|-		\|-

Jmli: /* Doping your wafer */

2019-11-25T20:29:40Z

Doping your wafer

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	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus
	*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG)		*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG)
	*Ion implantation (not possible at ~~Danchip~~)		*Ion implantation (not possible at Nanolab)

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Jmli at 20:29, 25 November 2019

2019-11-25T20:29:24Z

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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php?title=Specific_Process_Knowledge/Doping click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Doping click here]'''
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	== Doping your wafer ==		== Doping your wafer ==

	This page is about doping your wafer or making a thin film layer doped with boron, ~~phosphorous~~ or germanium. The links below direct you to various doping results achieved by the use of different processes and heat treatments.		This page is about doping your wafer or making a thin film layer doped with boron, phosphorus or germanium. The links below direct you to various doping results achieved by the use of different processes and heat treatments.

	*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with ~~phosphorous~~ by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorus by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/Oxide mask\|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion		*[[Specific Process Knowledge/Thermal Process/Oxide mask\|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion
	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or ~~phosphorous~~		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorus
	*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-~~phosphorous~~ glass (PBSG)		*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorus glass (PBSG)
	*Ion implantation (not possible at Danchip)		*Ion implantation (not possible at Danchip)

Thope: /* Doping your wafer */

2019-01-28T11:45:30Z

Doping your wafer

← Older revision		Revision as of 13:45, 28 January 2019
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	*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/~~Dope with Boron~~\|Oxide mask thickness]] - Required oxide mask thickness		*[[Specific Process Knowledge/Thermal Process/Oxide mask\|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion
	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous
	*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)		*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)

Thope: /* Doping your wafer */

2019-01-28T11:44:19Z

Doping your wafer

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	*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
			*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Oxide mask thickness]] - Required oxide mask thickness
	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous
	*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)		*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)

Pevo: /* Doping your wafer */

2018-01-29T13:49:58Z

Doping your wafer

← Older revision		Revision as of 15:49, 29 January 2018
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	*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous
	*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG), boron-phosphorous glass PBSG ~~or germanium doped glass~~		*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)
	*Ion implantation (not possible at Danchip)		*Ion implantation (not possible at Danchip)

Pevo: /* Comparison of different doping processes */

2018-01-29T13:49:25Z

Comparison of different doping processes

← Older revision		Revision as of 15:49, 29 January 2018
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	*Phosphorous (PH<sub>3</sub>)		*Phosphorous (PH<sub>3</sub>)
	*Boron (B<sub>2</sub>H<sub>6</sub>)		*Boron (B<sub>2</sub>H<sub>6</sub>)
	*Germanium (GeH<sub>4</sub>)
	\|		\|
	*Phosphorous (PH<sub>3</sub>)		*Phosphorous (PH<sub>3</sub>)

← Older revision		Revision as of 13:45, 28 January 2019
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	*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/~~Dope with Boron~~\|Oxide mask thickness]] - Required oxide mask thickness		*[[Specific Process Knowledge/Thermal Process/Oxide mask\|Oxide mask thickness]] - Required oxide mask thickness for pre deposition and diffusion
	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous
	*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)		*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)

← Older revision		Revision as of 13:44, 28 January 2019
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	*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus\|Doping with Phosphorous using high temperature furnaces]] - Doping silicon wafers with phosphorous by thermal pre-deposition and drive-in
	*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in		*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Doping with Boron using high temperature furnaces]] - Doping silicon wafers with boron by thermal pre-deposition and drive-in
			*[[Specific Process Knowledge/Thermal Process/Dope with Boron\|Oxide mask thickness]] - Required oxide mask thickness
	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si\|Doping using LPCVD PolySilicon Furnaces]] - Deposition of Poly-Si or amorphous Si doped with boron or phosphorous
	*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)		*[[Specific Process Knowledge/Thin film deposition/PECVD/Doping\|Doping using PECVD]] - Making boron glass (BSG), phosphorous glass (PSG) or boron-phosphorous glass (PBSG)