Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1 - Revision history

Jmli at 09:38, 21 October 2025

2025-10-21T09:38:30Z

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	= XPS analysis of ALD deposited layers =		= XPS analysis of ALD deposited layers =

2021-08-24T14:00:09Z

← Older revision		Revision as of 16:00, 24 August 2021
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			<!--Checked for updates on 24/8-2021. ok/ jmli-->

	= XPS analysis of ALD deposited layers =		= XPS analysis of ALD deposited layers =

2018-10-16T13:35:09Z

Data processing

← Older revision		Revision as of 15:35, 16 October 2018
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	==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey\|2. Survey spectra processing]] ====		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey\|2. Survey spectra processing]] ====

	==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/3scanned\|3. High resolution scan processing]]		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/3scanned\|3. High resolution scan processing]]====

2018-10-16T13:34:58Z

Data processing

← Older revision		Revision as of 15:34, 16 October 2018
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	==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open\|1. Open the experiment and prepare processing grids]] ====		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open\|1. Open the experiment and prepare processing grids]] ====

	==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey\|2. Survey spectra ~~procesing~~]] ====		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey\|2. Survey spectra processing]] ====

			==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/3scanned\|3. High resolution scan processing]]

2018-10-16T12:33:37Z

XPS analysis of ALD deposited layers

← Older revision		Revision as of 14:33, 16 October 2018
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	### Ti2p Scan		### Ti2p Scan
	### O1s Scan		### O1s Scan

			The three points are distributed in such a way on the sample holder plate as to minimise the redeposition of one depth profile onto another. They serve different purposes:
			* The second point labelled 'Scanned' is the slow and time consuming analysis using scanned spectra and includes survey spectra. It will take roughly 7.5 hours to do 35 levels.
			* The first point labelled 'snapshot' only records the fast snapshots (no survey) and therefore only takes about 30 minutes. The question is if one can obtain the same information as the scanned version.
			* The last point labelled 'Extended +20eV end, 0.2 eV step' is intended to be used for Quases analysis.

	== Guidelines on data processing ==		== Guidelines on data processing ==

2018-10-16T10:02:34Z

XPS analysis of ALD deposited layers

@@ Line 3: / Line 3: @@
 This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first.
-This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.
+This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>. In the XPS an experiment with three points of analysis has been set up to analyse this sandwiched structure:
 == Guidelines on data processing ==

2018-10-16T08:57:55Z

Data processing

← Older revision		Revision as of 10:57, 16 October 2018
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	==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open\|1. Open the experiment and prepare processing grids]] ====		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open\|1. Open the experiment and prepare processing grids]] ====

	~~Depth profile of ALD layers: Silicon wafer with 15 nm Al<sub>2<~~/~~sub>O<sub>3<~~/~~sub>, 15 nm of TiO<sub>2<~~/~~sub> and 16 nm of HfO<sub>~~2~~</sub>~~		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey\|2. Survey spectra procesing]] ====

2018-10-16T08:56:58Z

XPS analysis of ALD deposited layers

← Older revision		Revision as of 10:56, 16 October 2018
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	This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.		This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.


	== Guidelines on data processing ==		== Guidelines on data processing ==

2018-10-16T08:56:45Z

XPS analysis of ALD deposited layers

← Older revision		Revision as of 10:56, 16 October 2018
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	This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics\|'''HERE''']] and go through this part first.		This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics\|'''HERE''']] and go through this part first.

	This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.		This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.

2018-10-16T08:56:28Z

XPS analysis of ALD deposited layers

← Older revision		Revision as of 10:56, 16 October 2018
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	= XPS analysis of ALD deposited layers =		= XPS analysis of ALD deposited layers =

	This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics\|'''HERE''']] and go through this part first.		This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics\|'''HERE''']] and go through this part first.
			This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>.


	== Guidelines on data processing ==		== Guidelines on data processing ==

← Older revision		Revision as of 15:34, 16 October 2018
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	==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open\|1. Open the experiment and prepare processing grids]] ====		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/1Open\|1. Open the experiment and prepare processing grids]] ====

	==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey\|2. Survey spectra ~~procesing~~]] ====		==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/2Survey\|2. Survey spectra processing]] ====

			==== [[Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/3scanned\|3. High resolution scan processing]]