Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV) - Revision history

Eves: /* Transmittance measurements */

2023-11-09T16:00:58Z

Transmittance measurements

← Older revision		Revision as of 18:00, 9 November 2023
Line 293:		Line 293:
	<gallery caption="" widths="1000px" heights="400px" perrow="1">		<gallery caption="" widths="1000px" heights="400px" perrow="1">
	image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

Eves: /* Reflectance measurements */

2023-11-09T15:59:28Z

Reflectance measurements

← Older revision		Revision as of 17:59, 9 November 2023
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	image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at ~~150C~~ and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at 150°C and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at ~~350C~~ and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at 350°C and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.

Eves: /* Reflectance measurements */

2023-11-09T15:49:57Z

Reflectance measurements

← Older revision		Revision as of 17:49, 9 November 2023
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	image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at 150C and 2161 cycles (ca. 100nm) on a ssp Si using ALD. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at 150C and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at 350C and 2174 cycles (ca. 100nm) on a ssp Si using ALD. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at 350C and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.

Eves: /* Performance */

2023-10-17T14:21:16Z

Performance

← Older revision		Revision as of 16:21, 17 October 2023
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	* Wavelength range 200 nm to 1698 nm; (In reality, the shortest measurable wavelength is approximately 370 nm, primarily limited by the characteristics of the halogen light source. On the other end, the longest wavelength can be extended to 2100 nm, constrained by the objective of the measurement. Therefore, in practical terms, the achievable measurement wavelength range falls within 375-2100 nm.)		* Wavelength range 200 nm to 1698 nm; (In reality, the shortest measurable wavelength is approximately 370 nm, primarily limited by the characteristics of the halogen light source. On the other end, the longest wavelength can be extended to 2100 nm, constrained by the objective of the measurement. Therefore, in practical terms, the achievable measurement wavelength range falls within <b>375-2100 nm</b>.)
	* Spectral resolution 0.5 nm for UV/VIS detector, 3.0 nm for NIR detector. (The measured spectra can be stored separately, and the merge window of the two spectra can be customized);		* Spectral resolution 0.5 nm for UV/VIS detector, 3.0 nm for NIR detector. (The measured spectra can be stored separately, and the merge window of the two spectra can be customized);
	* Two objectives are installed on the system:		* Two objectives are installed on the system:

Eves: /* Transmittance measurements */

2023-10-03T07:43:16Z

Transmittance measurements

← Older revision		Revision as of 09:43, 3 October 2023
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	image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of Au layer deposited on fused silica wafer with APTMS as adhesion layer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

Eves: /* Reflectance measurements */

2023-10-03T07:42:26Z

Reflectance measurements

← Older revision		Revision as of 09:42, 3 October 2023
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	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/~~Deposition of Gold~~\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

Eves: /* Reflectance measurements */

2023-10-03T07:41:04Z

Reflectance measurements

← Older revision		Revision as of 09:41, 3 October 2023
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	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Process Knowledge/Thin film deposition/Deposition of Gold\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition of Gold\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

Eves: /* Reflectance measurements */

2023-10-03T07:40:26Z

Reflectance measurements

← Older revision		Revision as of 09:40, 3 October 2023
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	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with APTMS as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Process Knowledge/Thin film deposition/Deposition of Gold\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

Eves: /* Transmittance measurements */

2023-10-03T07:36:55Z

Transmittance measurements

← Older revision		Revision as of 09:36, 3 October 2023
Line 294:		Line 294:
	image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of Au layer deposited on fused silica wafer with APTMS as adhesion layer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

Eves: /* Transmittance measurements */

2023-10-03T07:36:26Z

Transmittance measurements

← Older revision		Revision as of 09:36, 3 October 2023
Line 293:		Line 293:
	<gallery caption="" widths="1000px" heights="400px" perrow="1">		<gallery caption="" widths="1000px" heights="400px" perrow="1">
	image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_fused_silica_wafer_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_alu_tio_multi_5x5_10bilayers_20231002.png\|Transmittance measurement of an alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_transmittance_rmal_Au_on_APTMS_20231002.png\|Transmittance measurement of a fused silica wafer. Standard CRAIC quartz sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

← Older revision		Revision as of 17:59, 9 November 2023
Line 280:		Line 280:
	image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at ~~150C~~ and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at 150°C and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at ~~350C~~ and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at 350°C and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.

← Older revision		Revision as of 17:49, 9 November 2023
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	image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Si_ssp_20231002.png\|Reflectance measurement of a Si (ssp, n-doped) wafer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_fused_silica_reference_20231002.png\|Reflectance measurement of a fused silica wafer piece. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at 150C and 2161 cycles (ca. 100nm) on a ssp Si using ALD. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_150C_2161cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at 150C and 2161 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of TiO2 deposited at 350C and 2174 cycles (ca. 100nm) on a ssp Si using ALD. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_TiO2_350C_2174cycles_refl_20231002.png\|Reflectance measurement of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/TiO2_deposition_using_ALD\|TiO2]] deposited at 350C and 2174 cycles (ca. 100nm) on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_AlN_20231002.png\|Reflectance measurement of 127 nm AlN deposited on a ssp 6" Si using reactive sputtering method. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200\|ALD]]. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.

← Older revision		Revision as of 09:42, 3 October 2023
Line 285:		Line 285:
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/~~Deposition of Gold~~\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition_of_Gold#Adhesion_of_Au_on_Si\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

← Older revision		Revision as of 09:41, 3 October 2023
Line 285:		Line 285:
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Process Knowledge/Thin film deposition/Deposition of Gold\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Specific Process Knowledge/Thin film deposition/Deposition of Gold\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>

← Older revision		Revision as of 09:40, 3 October 2023
Line 285:		Line 285:
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_Si_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a ssp Si using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Alu_TiO_5x5nm_10bilayer_on_glass_20231002.png\|Reflectance measurement of alumina-titania stack of total thickness of 100nm deposited on a fused silica wafer using ALD. Each layer is 5nm, so 10 bilayers in total. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with APTMS as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_rmal_Au_APTMS_20231002.png\|Reflectance measurement of Au layer deposited on fused silica wafer with [[Process Knowledge/Thin film deposition/Deposition of Gold\|APTMS as adhesion layer]]. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.		image:eves_CRAIC_reflectance_Au_200nm_20231002.png\|Reflectance measurement of 200nm Au layer deposited on ssp Si with 2 nm Cr as adhesion layer. Standard CRAIC Al sample was used as a reference. Objective 10X, Aperture number: 2.
	</gallery>		</gallery>