Specific Process Knowledge/Characterization/III-V ECV-profiler - Revision history

Jehan: /* III-V ECV-profiler */

2025-07-29T14:53:55Z

III-V ECV-profiler

← Older revision		Revision as of 16:53, 29 July 2025
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	'''Note!'''		'''Note!'''
	We can only offer very limited help for this system. The ECV-profiler is not used very much and it is an old system. It has not been serviced for many years and it is very difficult (impossible) to get spare parts and technical support for it.		We can only offer very limited help for this system. The ECV-profiler is not used very much and it is an old system. It has not been serviced for many years and it is very difficult (impossible) to get spare parts and technical support for it. /jehan

	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==

Jehan: /* III-V ECV-profiler */

2022-09-05T09:45:27Z

III-V ECV-profiler

← Older revision		Revision as of 11:45, 5 September 2022
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	ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.		ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.

			'''Note!'''
			We can only offer very limited help for this system. The ECV-profiler is not used very much and it is an old system. It has not been serviced for many years and it is very difficult (impossible) to get spare parts and technical support for it.

	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==

Jehan at 12:47, 23 August 2019

2019-08-23T12:47:58Z

← Older revision		Revision as of 14:47, 23 August 2019
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	'''Feedback to this page''': '''[mailto:danchipsupport@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/III-V_ECV-profiler click here]'''		'''Feedback to this page''': '''[mailto:danchipsupport@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.Nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/III-V_ECV-profiler click here]'''

	==III-V ECV-profiler==		==III-V ECV-profiler==
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	The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors.		The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors.

	''The ECV-profiler is maintained by DTU fotonik (not ~~Danchip~~) and is therefor not in LabManager!''		''The ECV-profiler is maintained by DTU fotonik (not DTU Nanolab) and is therefor not in LabManager!''

	ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.		ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.

Jehan: /* III-V ECV-profiler */

2017-03-24T14:12:25Z

III-V ECV-profiler

← Older revision		Revision as of 16:12, 24 March 2017
Line 12:		Line 12:

	ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.		ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.


	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==

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2014-12-11T13:07:24Z

Created page with "'''Feedback to this page''': '''[mailto:danchipsupport@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Kno..."

New page

'''Feedback to this page''': '''[mailto:danchipsupport@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/III-V_ECV-profiler click here]'''

==III-V ECV-profiler==

[[file:PN4300_ECV_profiler.JPG|300px|right|thumb|ECV profiler]]
[[file:PN4300_cell_compartment.jpg‎ |300px|right|thumb|ECV cell compartment]]
[[file:PN4300_doping_profile_example.jpg‎ |300px|right|thumb|Doping profile example. Three n-doped layers and substrate separated by undoped layers]]

The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors.

''The ECV-profiler is maintained by DTU fotonik (not Danchip) and is therefor not in LabManager!''

ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.

==Equipment performance and process related parameters==

{| border="2" cellspacing="0" cellpadding="10"
|-
!style="background:silver; color:black" align="left" rowspan="5" valign="top" |Performance
|style="background:LightGrey; color:black"|Excitation
|style="background:WhiteSmoke; color:black"|
*halogen white light source for n-type measurements to generate holes for the etching process
|-
|style="background:LightGrey; color:black"|Detection
|style="background:WhiteSmoke; color:black"|
* between 10^13 to 10^20 carriers/cm^3
|-
|style="background:LightGrey; color:black"|Sample size
|style="background:WhiteSmoke; color:black"|
*from 5x5mm (10x10mm recommended) up to 2" approximately
|-
|style="background:LightGrey; color:black"|Resolution
|style="background:WhiteSmoke; color:black"|
* Minimum depth resolution ~1 nm
* Measurement area:
** small ring: Ø 1 mm
** large ring: Ø 3 mm
|-
|style="background:LightGrey; color:black"|Carrier density accuracy
|style="background:WhiteSmoke; color:black"|
* very dependent on sample. Uncertainty can easily be +-50%.
|-
|-
!style="background:silver; color:black" align="left" rowspan="2" valign="top" |Materials
|style="background:LightGrey; color:black"|Allowed substrate materials
|style="background:WhiteSmoke; color:black"|
* III-V
* Silicon
|}