Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy/AFM Icon Acceptance - Revision history

Bghe at 07:32, 12 August 2025

2025-08-12T07:32:49Z

← Older revision		Revision as of 09:32, 12 August 2025
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			<!-- Updated 20250812 -->


	''This page has been made by Berit Herstrøm @ DTU Nanolab''		''This page has been made by Berit Herstrøm @ DTU Nanolab''

Bghe at 14:01, 30 January 2023

2023-01-30T14:01:17Z

← Older revision		Revision as of 16:01, 30 January 2023
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy/AFM_Icon_Acceptance click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy/AFM_Icon_Acceptance click here]'''

			''This page has been made by Berit Herstrøm @ DTU Nanolab''
	==Accessories following the systems ==		==Accessories following the systems ==
	{\| border="2" cellspacing="0" cellpadding="2" valign="top"		{\| border="2" cellspacing="0" cellpadding="2" valign="top"

Bghe: /* AFM Icon-Pt 2: Acceptance test 70px */

2022-08-29T12:48:33Z

AFM Icon-Pt 2: Acceptance test 70px

← Older revision		Revision as of 14:48, 29 August 2022
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	Phase: Phase imaging maps the phase lag between the periodic signal driving the cantilever and the oscillations of the cantilever. Changes in phase lag often indicate changes in the properties of the sample surface. Here the structuring in the graphene is very clear		Phase: Phase imaging maps the phase lag between the periodic signal driving the cantilever and the oscillations of the cantilever. Changes in phase lag often indicate changes in the properties of the sample surface. Here the structuring in the graphene is very clear

	==AFM Icon-Pt 2: Acceptance test ~~[[Image:section under construction.jpg\|70px]]~~==		==AFM Icon-Pt 2: Acceptance test==
	===Noise tests===		===Noise tests===
	====Sensor noise====		====Sensor noise====

Bghe: /* Tapping mode with RFESP-75 */

2020-05-18T15:45:53Z

Tapping mode with RFESP-75

← Older revision		Revision as of 17:45, 18 May 2020
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	*Step height: 1525 nm		*Step height: 1525 nm
	[[File:SiO2-resist step Tapping mode with RFESP-75.JPG\|400px]]		[[File:SiO2-resist step Tapping mode with RFESP-75.JPG\|400px]]

			===High Aspect ratio sample===
			High aspect ratio samples (e.g. 100 nm wide trenches 300 nm deep and 2 µm wide trenches 6µm deep). The probes for this: FIB6-400A.
			This was done and work spaces were created but no images was saved.

Bghe: /* Step measurement: Resist on silicon oxide */

2020-05-18T15:37:45Z

Step measurement: Resist on silicon oxide

← Older revision		Revision as of 17:37, 18 May 2020
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	*0dg		*0dg
	*Step height: 1545/1532 nm		*Step height: 1545/1532 nm
			[[File:SiO2-resist step Tapping mode with TAP150A.JPG\|400px]]
	====ScanAsyst with TAP150A====		====ScanAsyst with TAP150A====
	*CL on		*CL on
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	*Peak force frequency: 2 Hz		*Peak force frequency: 2 Hz
	*Step height: 1537 nm		*Step height: 1537 nm
			[[File:SiO2-resist step ScanAsyst mode with TAP150A.JPG\|400px]]
	====ScanAsyst with ScanAsyst-air====		====ScanAsyst with ScanAsyst-air====
	*CL on		*CL on
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	*Peak force frequency: 2 Hz		*Peak force frequency: 2 Hz
	*Step height: 1545 nm		*Step height: 1545 nm
			[[File:SiO2-resist step ScanAsyst mode with ScanAsyst-air.JPG\|400px]]
	====Tapping mode with RFESP-75====		====Tapping mode with RFESP-75====
	*CL on		*CL on
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	*0dg		*0dg
	*Step height: 1525 nm		*Step height: 1525 nm
			[[File:SiO2-resist step Tapping mode with RFESP-75.JPG\|400px]]

Bghe: /* Tapping mode with TAP150A */

2020-05-18T15:36:33Z

Tapping mode with TAP150A

← Older revision		Revision as of 17:36, 18 May 2020
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	====Tapping mode with TAP150A====		====Tapping mode with TAP150A====
	*CL on		*CL on
	~~25632~~		*256x32
	*0dg		*0dg
	*Step height: 1545/1532 nm		*Step height: 1545/1532 nm

	====ScanAsyst with TAP150A====		====ScanAsyst with TAP150A====
	*CL on		*CL on

Bghe: /* Step measurement: Resist on silicon oxide */

2020-05-18T15:36:10Z

Step measurement: Resist on silicon oxide

← Older revision		Revision as of 17:36, 18 May 2020
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	SEM images showed about 1.55µm – so it seems like ScanAsyst is pressing a little down in the resist compared with the SiO2 giving a too small height difference.		SEM images showed about 1.55µm – so it seems like ScanAsyst is pressing a little down in the resist compared with the SiO2 giving a too small height difference.
	Therefor When scanning steps with difference materials, when one of the materials is soft and you need to know the height difference, then it seems to be best to use tapping mode.		Therefor When scanning steps with difference materials, when one of the materials is soft and you need to know the height difference, then it seems to be best to use tapping mode.
			We did not save the images. Therefor I remeasured a few days later:
			====Tapping mode with TAP150A====
			*CL on
			25632
			*0dg
			*Step height: 1545/1532 nm
			====ScanAsyst with TAP150A====
			*CL on
			*256x32
			*0dg
			*ScanAsyst noise threshold: 1
			*PeakForce amplitide 75 nm (was set as standard from the probe settings)
			*Peak force frequency: 2 Hz
			*Step height: 1537 nm
			====ScanAsyst with ScanAsyst-air====
			*CL on
			*256x32
			*0dg
			*ScanAsyst noise threshold: 1
			*PeakForce amplitide 150 nm (I had to increase it from the 75 nm)
			*Peak force frequency: 2 Hz
			*Step height: 1545 nm
			====Tapping mode with RFESP-75====
			*CL on
			25632
			*0dg
			*Step height: 1525 nm

Bghe: /* Step measurement: Resist on silicon oxide */

2020-05-18T15:09:46Z

Step measurement: Resist on silicon oxide

← Older revision		Revision as of 17:09, 18 May 2020
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	===Step measurement: Resist on silicon oxide===		===Step measurement: Resist on silicon oxide===
			SIO2ICP_30 (Si-SiO2-Resist)
			*When scanning long lines and trenches scan 90 degrees to the probe and 90 degrees to the lines.
			*During acceptance:
			**Tapping mode: 3 µm structures (middle): 1.587µm
			**Tapping mode: 3µm structures (edge): 1.541µm
			**Peak Force tapping 3µm structures (edge) average: 1.497µm (tapping mode probe)
			**Peak Force tapping with ScanAsyst probe: 1.509µm
			SEM images showed about 1.55µm – so it seems like ScanAsyst is pressing a little down in the resist compared with the SiO2 giving a too small height difference.
			Therefor When scanning steps with difference materials, when one of the materials is soft and you need to know the height difference, then it seems to be best to use tapping mode.

Bghe: /* Tapping mode with RFESP-75 */

2020-05-18T15:01:58Z

Tapping mode with RFESP-75

← Older revision		Revision as of 17:01, 18 May 2020
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	*Rq: 0.224 nm		*Rq: 0.224 nm
	[[File:Roughness on Si 5 Tapping mode with RFESP-75 CL on.JPG\|400px]]		[[File:Roughness on Si 5 Tapping mode with RFESP-75 CL on.JPG\|400px]]

			===Step measurement: Resist on silicon oxide===

Bghe: /* Demonstrating roughness measurements on silicon */

2020-05-18T14:59:58Z

Demonstrating roughness measurements on silicon

← Older revision		Revision as of 16:59, 18 May 2020
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	===Demonstrating roughness measurements on silicon===		===Demonstrating roughness measurements on silicon===

	*#ScanAsyst with ScanAsyst-air		====ScanAsyst with ScanAsyst-air====
	#CL on		*CL on
	#512x512		*512x512
	#0dg		*0dg
	#ScanAsyst noise threshold: 1		*ScanAsyst noise threshold: 1
	#PeakForce amplitide 300 nm		*PeakForce amplitide 300 nm
	#Peak force frequency: 2 Hz		*Peak force frequency: 2 Hz
	#Rq: 0.247 nm		*Rq: 0.247 nm
	[[File:Roughness on Si 1 ScanAsyst with ScanAsyst-air CL on.JPG\|400px]]		[[File:Roughness on Si 1 ScanAsyst with ScanAsyst-air CL on.JPG\|400px]]
	*#ScanAsyst with ScanAsyst-air		====ScanAsyst with ScanAsyst-air====
	#CL off		*CL off
	#512x512		*512x512
	#0dg		*0dg
	#ScanAsyst noise threshold: 0.2		*ScanAsyst noise threshold: 0.2
	#PeakForce amplitide 300 nm		*PeakForce amplitide 300 nm
	#Peak force frequency: 2 Hz		*Peak force frequency: 2 Hz
	#Rq: 0.235 nm		*Rq: 0.235 nm
	[[File:Roughness on Si 2 ScanAsyst with ScanAsyst-air CL off.JPG\|400px]]		[[File:Roughness on Si 2 ScanAsyst with ScanAsyst-air CL off.JPG\|400px]]
	*#ScanAsyst with TAP150A		====ScanAsyst with TAP150A====
	#CL on		*CL on
	#512x512		*512x512
	#0dg		*0dg
	#ScanAsyst noise threshold: 1		*ScanAsyst noise threshold: 1
	#PeakForce amplitude 75 nm (was set as standard from the probe settings)		*PeakForce amplitude 75 nm (was set as standard from the probe settings)
	#Peak force frequency: 2 Hz		*Peak force frequency: 2 Hz
	#Rq: 0.238/0.250 nm		*Rq: 0.238/0.250 nm
	[[File:Roughness on Si 3 ScanAsyst with TAP150A CL on A.JPG\|400px]][[File:Roughness on Si 3 ScanAsyst with TAP150A CL on B.JPG\|400px]]		[[File:Roughness on Si 3 ScanAsyst with TAP150A CL on A.JPG\|400px]][[File:Roughness on Si 3 ScanAsyst with TAP150A CL on B.JPG\|400px]]
	*#Tapping mode with TAP150A		====Tapping mode with TAP150A====
	#CL on		*CL on
	#512x512		*512x512
	#0dg		*0dg
	#Rq: 0.214 nm		*Rq: 0.214 nm
	[[File:Roughness on Si 4 Tapping mode with TAP150A CL on.JPG\|400px]]		[[File:Roughness on Si 4 Tapping mode with TAP150A CL on.JPG\|400px]]
	*#Tapping mode with RFESP-75		====Tapping mode with RFESP-75====
	#CL on		*CL on
	#512x512		*512x512
	#0dg		*0dg
	#Rq: 0.224 nm		*Rq: 0.224 nm
	[[File:Roughness on Si 5 Tapping mode with RFESP-75 CL on.JPG\|400px]]		[[File:Roughness on Si 5 Tapping mode with RFESP-75 CL on.JPG\|400px]]