Specific Process Knowledge/Bonding/Fusion bonding - Revision history

Mmat at 17:13, 27 May 2025

2025-05-27T17:13:19Z

← Older revision		Revision as of 19:13, 27 May 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:photolith@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Fusion_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Fusion_bonding click here]'''
			<br>
	~~'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''~~		<br>

	==Fusion Bonding==		==Fusion Bonding==

Sifkle at 06:24, 6 February 2023

2023-02-06T06:24:35Z

← Older revision		Revision as of 08:24, 6 February 2023
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	'''Feedback to this page''': '''[mailto:photolith@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Fusion_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Fusion_bonding click here]'''

			'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''

	==Fusion Bonding==		==Fusion Bonding==

Jmli at 15:09, 25 November 2019

2019-11-25T15:09:26Z

← Older revision		Revision as of 17:09, 25 November 2019
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	'''Feedback to this page''': '''[mailto:photolith@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Fusion_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Fusion_bonding click here]'''

	==Fusion Bonding==		==Fusion Bonding==

	Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000°C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old ~~DANCHIP~~ nitride furnace.		Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000°C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DTU Nanolab nitride furnace.

	Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.		Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.

Rkch at 13:36, 18 May 2017

2017-05-18T13:36:51Z

← Older revision		Revision as of 15:36, 18 May 2017
Line 4:		Line 4:

	Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000°C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DANCHIP nitride furnace.		Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000°C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DANCHIP nitride furnace.

	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of ±2 microns is possible by very experienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=±40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignment is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.

	Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.		Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.

	~~===Bonding procedure===~~

	*'''Remember to use double side polished wafers for IR alingment.'''
	*Clean the wafers with [[Specific Process Knowledge/Wafer cleaning/IMEC\|IMEC]] clean.
	*Transport the wafers to the bonder in a clean box.
	*Clean the chuck with ethanol.
	*Clean the glass top with ethanol.
	*Clean the graphite electrode with ethanol.
	*Clean the bond glass with Ethanol.
	*Place the wafers in the aligner with a clean tweezer.
	*Align the wafers
	*Place the chuck and graphite electrode in the chamber.
	*Close the chamber.
	*Turn the µm screw on top of the chamber to set the desired stack height.
	*After pre bonding in the EVG NIL the wafers are to be annealed in the bond furnace (C3) at 1000<sup>o</sup>C.

Taran: /* Fusion Bonding */

2016-04-08T08:59:47Z

Fusion Bonding

← Older revision		Revision as of 10:59, 8 April 2016
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	==Fusion Bonding==		==Fusion Bonding==

	Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at ~~1000<math>\rm{^o}</math>C~~ afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DANCHIP nitride furnace.		Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000°C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DANCHIP nitride furnace.

	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of ±2 microns is possible by very experienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=±40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignment is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of ±2 microns is possible by very experienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=±40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignment is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.

Jehem at 08:09, 22 October 2013

2013-10-22T08:09:24Z

← Older revision		Revision as of 10:09, 22 October 2013
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			'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Fusion_bonding click here]'''

	==Fusion Bonding==		==Fusion Bonding==

BGE: /* Fusion Bonding */

2008-04-23T07:48:56Z

Fusion Bonding

← Older revision		Revision as of 09:48, 23 April 2008
Line 1:		Line 1:
	==Fusion Bonding==		==Fusion Bonding==

	Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000<math>\rm{^o}</math>C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with ~~SiO2~~ layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DANCHIP nitride furnace.		Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000<math>\rm{^o}</math>C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DANCHIP nitride furnace.

	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very experienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignment is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of ±2 microns is possible by very experienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=±40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignment is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.

	Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.		Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.

Rkc at 10:32, 14 March 2008

2008-03-14T10:32:22Z

← Older revision		Revision as of 12:32, 14 March 2008
Line 1:		Line 1:
	==Fusion Bonding==		==Fusion Bonding==

	Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000<math>\rm{^o}</math>C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO2 layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but ~~unfortunetly~~ not with the old DANCHIP nitride furnace.		Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000<math>\rm{^o}</math>C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO2 layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DANCHIP nitride furnace.

	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very ~~exprienced~~ users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR ~~alignmant~~ is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very experienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignment is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.

	Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.		Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.
Line 14:		Line 14:
	*Clean the chuck with ethanol.		*Clean the chuck with ethanol.
	*Clean the glass top with ethanol.		*Clean the glass top with ethanol.
	*~~CLean~~ the graphite electrode with ethanol.		*Clean the graphite electrode with ethanol.
	*Clean the bond glass with Ethanol.		*Clean the bond glass with Ethanol.
	*Place the wafers in the ~~alinger~~ with a clean tweezer.		*Place the wafers in the aligner with a clean tweezer.
	*Align the wafers		*Align the wafers
	*Place the chuck and graphite electrode in the chamber.		*Place the chuck and graphite electrode in the chamber.
	*Close the chamber.		*Close the chamber.
	*Turn the µm screw on top of the chamber to set the desired stack height.		*Turn the µm screw on top of the chamber to set the desired stack height.
	*After pre bonding in the EVG NIL the wafers are to be annealed in the bond ~~fornace~~ (C3) at 1000<sup>o</sup>C.		*After pre bonding in the EVG NIL the wafers are to be annealed in the bond furnace (C3) at 1000<sup>o</sup>C.

Rkc at 10:20, 13 March 2008

2008-03-13T10:20:25Z

← Older revision		Revision as of 12:20, 13 March 2008
Line 21:		Line 21:
	*Close the chamber.		*Close the chamber.
	*Turn the µm screw on top of the chamber to set the desired stack height.		*Turn the µm screw on top of the chamber to set the desired stack height.
			*After pre bonding in the EVG NIL the wafers are to be annealed in the bond fornace (C3) at 1000<sup>o</sup>C.

Rkc at 09:32, 13 March 2008

2008-03-13T09:32:36Z

← Older revision		Revision as of 11:32, 13 March 2008
Line 1:		Line 1:
	==Fusion Bonding==		==Fusion Bonding==

	Fusion bonding is a ~~weaker~~ bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000<math>\rm{^o}</math>C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO2 layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunetly not with the old DANCHIP nitride furnace.		Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000<math>\rm{^o}</math>C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO2 layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunetly not with the old DANCHIP nitride furnace.

	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.