Specific Process Knowledge/Bonding/Eutectic bonding - Revision history

Mmat at 17:12, 27 May 2025

2025-05-27T17:12:33Z

← Older revision		Revision as of 19:12, 27 May 2025
Line 1:		Line 1:
			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Eutectic_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Eutectic_bonding click here]'''
			<br>
	~~'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''~~		<br>

	==Eutectic Bonding==		==Eutectic Bonding==

Rkch at 10:35, 6 February 2023

2023-02-06T10:35:48Z

← Older revision		Revision as of 12:35, 6 February 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Eutectic_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Eutectic_bonding click here]'''

	'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''		'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''

Sifkle at 06:24, 6 February 2023

2023-02-06T06:24:06Z

← Older revision		Revision as of 08:24, 6 February 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Eutectic_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Eutectic_bonding click here]'''
			'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''

	==Eutectic Bonding==		==Eutectic Bonding==

Rkch: /* Eutectic Bonding */

2021-03-30T09:02:22Z

Eutectic Bonding

← Older revision		Revision as of 11:02, 30 March 2021
Line 3:		Line 3:
	==Eutectic Bonding==		==Eutectic Bonding==

	Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature.		Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature

Rkch: /* Eutectic Bonding */

2017-06-02T08:37:58Z

Eutectic Bonding

← Older revision		Revision as of 10:37, 2 June 2017
Line 9:		Line 9:
	!Eutecticum		!Eutecticum
	!Eutectic temperature		!Eutectic temperature
	!Bonding temperature in ~~EVG NIL~~		!Bonding temperature in Wafer Bonder 02
	\|- valign="top"		\|- valign="top"
	\|AuSi		\|AuSi

Rkch at 13:35, 18 May 2017

2017-05-18T13:35:43Z

← Older revision		Revision as of 15:35, 18 May 2017
Line 26:		Line 26:
	\|-		\|-
	\|}		\|}


	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of ±2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=±40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.


	~~===Bonding procedure===~~

	*'''Remember to use double side polished wafers for IR alingment.'''
	*Align the wafers
	*Place the chuck and graphite electrode in the chamber.
	*Close the chamber.
	*Turn the µm screw on top of the chamber to set the desired stack height.

Taran: /* Eutectic Bonding */

2016-04-08T08:59:13Z

Eutectic Bonding

← Older revision		Revision as of 10:59, 8 April 2016
Line 3:		Line 3:
	==Eutectic Bonding==		==Eutectic Bonding==

	Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different ~~eutecticums~~ have a different eutectic (bonding) temperature.		Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature.

Jehem at 08:08, 22 October 2013

2013-10-22T08:08:22Z

← Older revision		Revision as of 10:08, 22 October 2013
Line 1:		Line 1:
			'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Eutectic_bonding click here]'''

	==Eutectic Bonding==		==Eutectic Bonding==

BGE: /* Eutectic Bonding */

2008-04-23T07:47:40Z

Eutectic Bonding

← Older revision		Revision as of 09:47, 23 April 2008
Line 26:		Line 26:


	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of &~~plusmn2~~ microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=&~~plusmn40mm~~ for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of ±2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=±40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.

BGE: /* Eutectic Bonding */

2008-04-23T07:43:39Z

Eutectic Bonding

← Older revision		Revision as of 09:43, 23 April 2008
Line 26:		Line 26:


	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of ~~+-2~~ microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=~~+-40mm~~ for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of &plusmn2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=&plusmn40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns.