Specific Process Knowledge/Bonding/Anodic bonding - Revision history

Mmat at 17:12, 27 May 2025

2025-05-27T17:12:11Z

← Older revision		Revision as of 19:12, 27 May 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Anodic_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Anodic_bonding click here]'''
			<br>
	~~'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''~~		<br>

	==Anodic Bonding==		==Anodic Bonding==

Sifkle at 06:25, 6 February 2023

2023-02-06T06:25:20Z

← Older revision		Revision as of 08:25, 6 February 2023
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	'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Anodic_bonding click here]'''		'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Anodic_bonding click here]'''

			'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''

	==Anodic Bonding==		==Anodic Bonding==

Rkch: /* Anodic Bonding */

2019-07-02T10:52:43Z

Anodic Bonding

← Older revision		Revision as of 12:52, 2 July 2019
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	Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The Wafer Bonder 02 only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally 1000 mbar. For a normal bond the temperature used is 400°C and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=320°C and V=1200V.		Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The Wafer Bonder 02 only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally 1000 mbar. For a normal bond the temperature used is 400°C and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=320°C and V=1200V.

	Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in ~~DANCHIPS~~ cleanroom with Pyrex wafer. This also includes the plasma systems.		Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in Nanolabs cleanroom with Pyrex wafer. This also includes the plasma systems.

Rkch: /* Anodic Bonding */

2017-06-02T08:39:52Z

Anodic Bonding

← Older revision		Revision as of 10:39, 2 June 2017
Line 3:		Line 3:
	==Anodic Bonding==		==Anodic Bonding==

	Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The ~~EVG NIL~~ only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally ~~1000N~~. For a normal bond the temperature used is 400°C and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=320°C and V=1200V.		Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The Wafer Bonder 02 only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally 1000 mbar. For a normal bond the temperature used is 400°C and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=320°C and V=1200V.

	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result.

	Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.		Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.

Rkch at 13:37, 18 May 2017

2017-05-18T13:37:31Z

← Older revision		Revision as of 15:37, 18 May 2017
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	Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.		Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.

	~~===Bonding procedure===~~
	*If the wafers are to be aligned remember to put the Si wafers in first (Si wafer closest to the chuck).
	*If the wafers are just stacked on top of each other remember to put the Si below (Si wafer closest to the chuck).
	*Align the wafers
	*Place the chuck and graphite electrode in the chamber.
	*Close the chamber.
	*Turn the µm screw on top of the chamber to set the desired stack height.

Taran: /* Anodic Bonding */

2016-04-08T09:00:26Z

Anodic Bonding

← Older revision		Revision as of 11:00, 8 April 2016
Line 3:		Line 3:
	==Anodic Bonding==		==Anodic Bonding==

	Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The EVG NIL only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally 1000N. For a normal bond the temperature used is ~~400<math>\rm{^o}</math>C~~ and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=~~320<math>\rm{^o}</math>C~~ and V=1200V.		Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The EVG NIL only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally 1000N. For a normal bond the temperature used is 400°C and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=320°C and V=1200V.

	Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result.		Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result.

Jehem at 08:09, 22 October 2013

2013-10-22T08:09:48Z

← Older revision		Revision as of 10:09, 22 October 2013
Line 1:		Line 1:
			'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Bonding/Anodic_bonding click here]'''

	==Anodic Bonding==		==Anodic Bonding==

Jehan: /* Bonding procedure */

2011-03-18T09:30:51Z

Bonding procedure

← Older revision		Revision as of 11:30, 18 March 2011
Line 8:		Line 8:

	===Bonding procedure===		===Bonding procedure===
	*If the wafers are to be ~~alinged remeber~~ to put the Si wafers in first (Si wafer closest to the chuck).		*If the wafers are to be aligned remember to put the Si wafers in first (Si wafer closest to the chuck).
	*If the wafers are just ~~stacket~~ on top of each other ~~remeber~~ to put the Si ~~bellow~~ (Si wafer closest to the chuck).		*If the wafers are just stacked on top of each other remember to put the Si below (Si wafer closest to the chuck).
	*Align the wafers		*Align the wafers
	*Place the chuck and graphite electrode in the chamber.		*Place the chuck and graphite electrode in the chamber.
	*Close the chamber.		*Close the chamber.
	*Turn the µm screw on top of the chamber to set the desired stack height.		*Turn the µm screw on top of the chamber to set the desired stack height.

Rkc at 09:26, 13 March 2008

2008-03-13T09:26:20Z

← Older revision		Revision as of 11:26, 13 March 2008
Line 6:		Line 6:

	Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.		Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.

			===Bonding procedure===
			*If the wafers are to be alinged remeber to put the Si wafers in first (Si wafer closest to the chuck).
			*If the wafers are just stacket on top of each other remeber to put the Si bellow (Si wafer closest to the chuck).
			*Align the wafers
			*Place the chuck and graphite electrode in the chamber.
			*Close the chamber.
			*Turn the µm screw on top of the chamber to set the desired stack height.

Rkc at 13:39, 10 March 2008

2008-03-10T13:39:10Z

← Older revision		Revision as of 15:39, 10 March 2008
Line 3:		Line 3:
	Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The EVG NIL only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally 1000N. For a normal bond the temperature used is 400<math>\rm{^o}</math>C and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=320<math>\rm{^o}</math>C and V=1200V.		Anodic bonding can only occur between a Silicon wafer and a Pyrex (Borofloat) glass, not a quartz (fused silica). It is a strong chemical bond made by an E-field depleting the surface of the Pyrex wafer from Na+ ions. Hence it is very important to stack the Si wafers and the Pyrex wafer in the right order. Otherwise the Pyrex wafer could bond to the chuck or electrode, depending on the direction of the E-Field. The EVG NIL only operates with an negative voltage meaning that one should always place the Si wafer closest to the chuck, and the Pyrex wafer closest to the electrode. Almost no force is needed to push the wafers together normally 1000N. For a normal bond the temperature used is 400<math>\rm{^o}</math>C and the voltage is 600V. It is possible to decrease the temperature if one increases the voltage, eg. T=320<math>\rm{^o}</math>C and V=1200V.

			Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result.

	Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.		Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems.