LabAdviser/Technology Research/Quantitative electron microscopy of 2D materials - Revision history

Bghe: /* Quantitative electron microscopy of 2D materials */

2020-11-25T12:15:46Z

Quantitative electron microscopy of 2D materials

← Older revision		Revision as of 14:15, 25 November 2020
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	*'''Partners involved:''' DTU Physics		*'''Partners involved:''' DTU Physics
	*'''Project start''':yyyy-mm-dd		*'''Project start''':yyyy-mm-dd
			*Link to final thesis:

	=Project description=		=Project description=

Bghe: /* Quantitative electron microscopy of 2D materials */

2020-05-06T09:47:32Z

Quantitative electron microscopy of 2D materials

← Older revision		Revision as of 11:47, 6 May 2020
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	*'''Supervisors:''' Thomas Willum Hansen, Tim Booth, Shima Kadkhodazadeh		*'''Supervisors:''' Thomas Willum Hansen, Tim Booth, Shima Kadkhodazadeh
	*'''Partners involved:''' DTU Physics		*'''Partners involved:''' DTU Physics
			*'''Project start''':yyyy-mm-dd

	=Project description=		=Project description=

Jenk at 08:50, 27 March 2020

2020-03-27T08:50:12Z

← Older revision		Revision as of 10:50, 27 March 2020
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	*'''Partners involved:''' DTU Physics		*'''Partners involved:''' DTU Physics

	==Project description==
			=Project description=
	In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure.		In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure.

	== Further information ==
			= Publications =

			== First author ==

			== Co-author ==

			= Conference contributions =

			== Presentation ==

			== Poster ==

			= Further information =

	* Description how to prepare a FIB lamella in the FEI Helios Dualbeam: [[LabAdviser/314/Preparation 314-307/Solid-matter/FIB-lamella\|[CLICK]]]		* Description how to prepare a FIB lamella in the FEI Helios Dualbeam: [[LabAdviser/314/Preparation 314-307/Solid-matter/FIB-lamella\|[CLICK]]]

Jenk at 12:15, 25 March 2020

2020-03-25T12:15:20Z

← Older revision		Revision as of 14:15, 25 March 2020
Line 7:		Line 7:
	==Project description==		==Project description==
	In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure.		In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure.

			== Further information ==

			* Description how to prepare a FIB lamella in the FEI Helios Dualbeam: [[LabAdviser/314/Preparation 314-307/Solid-matter/FIB-lamella\|[CLICK]]]

Abaand: Created page with "='' Quantitative electron microscopy of 2D materials ''= '''Project type:''' Ph.D project '''Project responsible:''' Anton Bay Andersen *'''Supervisors:''' Thomas Willum Han..."

2020-03-13T14:49:30Z

Created page with "='' Quantitative electron microscopy of 2D materials ''= *'''Project type:''' Ph.D project *'''Project responsible:''' Anton Bay Andersen *'''Supervisors:''' Thomas Willum Han..."

New page

='' Quantitative electron microscopy of 2D materials ''=
*'''Project type:''' Ph.D project
*'''Project responsible:''' Anton Bay Andersen
*'''Supervisors:''' Thomas Willum Hansen, Tim Booth, Shima Kadkhodazadeh
*'''Partners involved:''' DTU Physics

==Project description==
In this project 2D semiconductors, transition metal dichalcogenides, will be characterized both spatially and spectrally using state‐of‐the‐art scanning electron microscopy and aberration corrected transmission electron microscopy. The research is focused on quantitative electron microscopy with atomic accuracy to examine both the atomic structure of the 2D materials, devices made of stacks of these materials and spectral properties of these structures (electronic structure excitations). These results will come from STEM/STEM‐EELS and TEM experiments designed and performed often prepared with the in‐situ lift-out method. The expected outcomes of the experiments are information of the atomic structure of the 2D materials and the effect of how stacking and patterning affect the structure along with the electronic structure.

LabAdviser/Technology Research/Quantitative electron microscopy of 2D materials - Revision history

Bghe: /* Quantitative electron microscopy of 2D materials */

Bghe: /* Quantitative electron microscopy of 2D materials */

Jenk at 08:50, 27 March 2020

Jenk at 12:15, 25 March 2020

Abaand: Created page with "='' Quantitative electron microscopy of 2D materials ''= *'''Project type:''' Ph.D project *'''Project responsible:''' Anton Bay Andersen *'''Supervisors:''' Thomas Willum Han..."

Abaand: Created page with "='' Quantitative electron microscopy of 2D materials ''= '''Project type:''' Ph.D project '''Project responsible:''' Anton Bay Andersen *'''Supervisors:''' Thomas Willum Han..."