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	<title>File:WF 2C2 feb2011-030.jpg - Revision history</title>
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	<updated>2026-05-05T19:39:22Z</updated>
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		<title>Jml: Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.</title>
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		<updated>2011-03-18T10:42:38Z</updated>

		<summary type="html">&lt;p&gt;Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.&lt;/p&gt;
&lt;p&gt;&lt;b&gt;New page&lt;/b&gt;&lt;/p&gt;&lt;div&gt;Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.&lt;/div&gt;</summary>
		<author><name>Jml</name></author>
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