Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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</gallery> | </gallery> | ||
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | <gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> | ||
image:borDiffusionDepthtable.jpg | image:borDiffusionDepthtable.jpg|Temp=1125 <sup>o</sup>C | ||
image:borDiffusionDepthplot.jpg | image:borDiffusionDepthplot.jpg|Temp=1125 <sup>o</sup>C | ||
Revision as of 13:29, 25 June 2014
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Dope with boron
The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.
The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.
- Boron profiles from SIMS
1 hour, Temp=1125 oC
6 hours, Temp=1125 oC
16 hours, Temp=1125 oC
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> image:borDiffusionDepthtable.jpg|Temp=1125 oC image:borDiffusionDepthplot.jpg|Temp=1125 oC