Specific Process Knowledge/Direct Structure Definition

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Direct Structure Definiton

By direct structure definition we mean that you form the structures for you device directly in the material that the device consist of without any masking steps.

Advantages of direct structure definition may be ..

• Quicker process because no need for masking steps
• In some cases the structure is defined directly by a computer, so changes in the design can be made very quickly.

Dis-advantages could be

• Limited choice of materials
• Limited resolution

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Choose method of structuring/equipment

• Imprinting
• Lithography
• Laser ablation
• Polymer Injection Molder

Materials for structuring

• Polymers
  • SU-8
    • UV Lithography
  • Topas
    • Polymer Injection Molder
    • Nano Imprint Lithography
    • 2-Photon Polymerization Lithography
  • PMMA
    • Nano Imprint Lithography
  • AZ resists
    • 2-Photon Polymerization Lithography
  • ...
• Metals
  • Laser ablation
• Silicon
  • Laser ablation
• Glass
  • Laser ablation
  • Sandblasting (at DTU Nanotech).

Choose equipment

• Laser Micromachining Tool
• Polymer Injection Molder
• Nano Imprint Lithography
• 2-Photon Polymerization Lithography

Comparison of equipment/material

Polymers	Nano Imprint Lithography	2-Photon Polymerization Lithography	Polymer Injection Molder	Laser Micromachining Tool
Generel description	Low Pressure Chemical Vapour Deposition (LPCVD furnace process)	Plasma Enhanced Chemical Vapour Deposition (PECVD process)	Reactive sputtering
Allowed materials	Silicon Silicon oxide Silicon nitride Pure quartz (fused silica) Processed wafers have to be RCA cleaned	Silicon Silicon oxide (with boron, phosphorous and germanium) Silicon nitrides (with boron, phosphorous and germanium) Pure quartz (fused silica)	Any

Metals/Silicon/Glass	Nano Imprint Lithography	2-Photon Polymerization Lithography	Polymer Injection Molder	Laser Micromachining Tool
Generel description	Low Pressure Chemical Vapour Deposition (LPCVD furnace process)	Plasma Enhanced Chemical Vapour Deposition (PECVD process)	Reactive sputtering
Allowed materials	Silicon Silicon oxide Silicon nitride Pure quartz (fused silica) Processed wafers have to be RCA cleaned	Silicon Silicon oxide (with boron, phosphorous and germanium) Silicon nitrides (with boron, phosphorous and germanium) Pure quartz (fused silica)	Any