Specific Process Knowledge/Bonding: Difference between revisions

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== Choose bonding method ==
== Choose bonding method ==


*Eutectic bonding
*[[/Eutectic bonding|Eutectic bonding]]
*Fusion bonding
*Fusion bonding
*Anodic bonding
*Anodic bonding
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== Choose equipment ==
== Choose equipment ==
*Speedline manual spinner - ''For spinning of PMMA and Topas''
*Speedline manual spinner - ''For spinning of PMMA and Topas''
*EVG NIL
*EVG NIL

Revision as of 14:58, 10 March 2008

Choose bonding method

Comparing the three bonding methods in the EVG NIL

. Eutectic bonding Fusion bonding Anodic bonding
General description For bonding two substrates by use of an interphase that makes an eutecticum. For bonding two identical materials. For bonding Si and Glass.
Bonding temperature Depending on the eutecticum 310C to 400C. Depending on defects 50C to 400C. Depending on the voltage 300C to 500C Standard is 400C.
Annnealing temperature No annealing 1000C in the bond furnace C3 No annealing
Materials possible to bond Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Ni/Si Si/Si, SiO/SiO Si/Pyrex (glass)
Substrate size Up to 6" (aligning only possible for 4" and 6") Up to 6" (aligning only possible for 4" and 6") Up to 6" (aligning only possible for 4" and 6")
Cleaning Cleaning by N2. Wet chemical cleaning, IMEC. Cleaning by N2.

Choose equipment

  • Speedline manual spinner - For spinning of PMMA and Topas
  • EVG NIL