Specific Process Knowledge/Bonding: Difference between revisions
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|'''Materials possible to bond''' | |'''Materials possible to bond''' | ||
|Bonding of | |Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Ni/Si | ||
|Si/Si, SiO<math>_2</math>/SiO<math>_2</math> | |Si/Si, SiO<math>_2</math>/SiO<math>_2</math> | ||
|Si/Pyrex (glass) | |Si/Pyrex (glass) | ||
Revision as of 14:42, 10 March 2008
Choose bonding method
- Eutectic bonding
- Fusion bonding
- Anodic bonding
Comparing the three bonding methods
| . | Eutectic bonding | Fusion bonding | Anodic bonding |
|---|---|---|---|
| General description | For bonding two substrates by use of an interphase that makes an eutecticum. | For bonding two identical materials. | For bonding Si and Glass. |
| Bonding temperature | Depending on the eutecticum 310C to 400C. | Depending on defects 50C to 400C. | Depending on the voltage 300C to 500C Standard is 400C. |
| Annnealing temperature | No annealing | 1000C in the bond furnace C3 | No annealing |
| Materials possible to bond | Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Ni/Si | Si/Si, SiO/SiO | Si/Pyrex (glass) |
| Substrate size | Up to 6" | Up to 6" | Up to 6" |
| Resolution z | 1Å or 25Å | 1Å, 10Å or 20Å | <1Å - accuracy better than 2% |
| Max. scan depth [µm] (as a function of trench width W) | 0.87(W[µm]-5µm) | 1.2(W[µm]-5µm) | ~1 with standard cantilever. |
| Tip radius | 5 µm 60o cone | 5 µm 45o cone | <12 nm on standard cantilever |
| Stress measurement | Can be done | Can be done | Cannot be done |
| Surface roughness | Can be done on a line scan | Can be done on a line scan | Can be done on a selected surface area |
Choose equipment
- Speedline manual spinner - For spinning of PMMA and Topas