Specific Process Knowledge/Bonding: Difference between revisions

Revision as of 14:36, 10 March 2008

.	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials).	For bonding two identical materials eg. Si/Si.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310 $^{o}$ C to 400 $^{o}$ C.	Depending on defects 50 $^{o}$ C to 400 $^{o}$ C.	Depending on the voltage 300 $^{o}$ C to 500 $^{o}$ C Standard is 400 $^{o}$ C.
Annnealing temperature	No annealing	1000 $^{o}$ C in the bond furnace C3	No annealing
Materials possible to bond	Au/Si , Au/Sn, Ni/Si	Si/Si, SiO $_{2}$ /SiO $_{2}$	Si/Pyrex (glass)
Substrate size	Up to 6"	Up to 6"	Up to 6"
Resolution z	1Å or 25Å	1Å, 10Å or 20Å	<1Å - accuracy better than 2%
Max. scan depth [µm] (as a function of trench width W)	0.87(W[µm]-5µm)	1.2(W[µm]-5µm)	~1 with standard cantilever.
Tip radius	5 µm 60^o cone	5 µm 45^o cone	<12 nm on standard cantilever
Stress measurement	Can be done	Can be done	Cannot be done
Surface roughness	Can be done on a line scan	Can be done on a line scan	Can be done on a selected surface area

@@ Line 27: / Line 27: @@
 |No annealing
 |-valign="top"
-|'''Max. scan range z'''
+|'''Materials possible to bond'''
-|<100Å to~0.3mm
+|Au/Si , Au/Sn, Ni/Si
-|50Å to 262µm
+|Si/Si, SiO<math>_2</math>/SiO<math>_2</math>
-|1 µm (can go up to 5 µm under special settings)
+|Si/Pyrex (glass)
 |-valign="top"
-|'''Resolution xy'''
+|'''Substrate size'''
-|up to 5900 data points per profile
+|Up to 6"
-|down to 0.067 µm
+|Up to 6"
-|Depending on scan size and number of samples per line and number of lines - accuracy better than 2%
+|Up to 6"
 |-valign="top"
 |'''Resolution z'''