Specific Process Knowledge/Bonding: Difference between revisions
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*Fusion bonding | *Fusion bonding | ||
*Anodic bonding | *Anodic bonding | ||
===Comparing the three bonding methods=== | |||
{| border="2" cellspacing="0" cellpadding="4" align="center" | |||
!. | |||
!Eutectic bonding | |||
!Fusion bonding | |||
!Anodic bonding | |||
|- valign="top" | |||
|'''General description''' | |||
|For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials). | |||
|For bonding two identical materials eg. Si/Si. | |||
|For bonding Si and Glass. | |||
|-valign="top" | |||
|'''Bonding temperature''' | |||
|Depending on the eutecticum 310<math>^o</math>C to 400<math>^o</math>C. | |||
|Depending on defects 50<math>^o</math>C to 400<math>^o</math>C. | |||
|Depending on the voltage 300<math>^o</math>C to 500<math>^o</math>C Standard is 400<math>^o</math>C. | |||
|-valign="top" | |||
|'''Annnealing temperature''' | |||
|No annealing | |||
|1000<math>^o</math>C in the bond furnace C3 | |||
|No annealing | |||
|-valign="top" | |||
|'''Max. scan range z''' | |||
|<100Å to~0.3mm | |||
|50Å to 262µm | |||
|1 µm (can go up to 5 µm under special settings) | |||
|-valign="top" | |||
|'''Resolution xy''' | |||
|up to 5900 data points per profile | |||
|down to 0.067 µm | |||
|Depending on scan size and number of samples per line and number of lines - accuracy better than 2% | |||
|-valign="top" | |||
|'''Resolution z''' | |||
|1Å or 25Å | |||
|1Å, 10Å or 20Å | |||
|<1Å - accuracy better than 2% | |||
|- valign="top" | |||
|'''Max. scan depth [µm] (as a function of trench width W''') | |||
|0.87(W[µm]-5µm) | |||
|1.2(W[µm]-5µm) | |||
|~1 with standard cantilever. | |||
|-valign="top" | |||
|'''Tip radius''' | |||
|5 µm 60<sup>o</sup> cone | |||
|5 µm 45<sup>o</sup> cone | |||
|<12 nm on standard cantilever | |||
|-valign="top" | |||
|'''Stress measurement''' | |||
|Can be done | |||
|Can be done | |||
|Cannot be done | |||
|-valign="top" | |||
|'''Surface roughness''' | |||
|Can be done on a line scan | |||
|Can be done on a line scan | |||
|Can be done on a selected surface area | |||
|- | |||
|} | |||
== Choose equipment == | == Choose equipment == | ||
*Speedline manual spinner - ''For spinning of PMMA and Topas'' | *Speedline manual spinner - ''For spinning of PMMA and Topas'' | ||
Revision as of 14:26, 10 March 2008
Choose bonding method
- Eutectic bonding
- Fusion bonding
- Anodic bonding
Comparing the three bonding methods
| . | Eutectic bonding | Fusion bonding | Anodic bonding |
|---|---|---|---|
| General description | For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials). | For bonding two identical materials eg. Si/Si. | For bonding Si and Glass. |
| Bonding temperature | Depending on the eutecticum 310C to 400C. | Depending on defects 50C to 400C. | Depending on the voltage 300C to 500C Standard is 400C. |
| Annnealing temperature | No annealing | 1000C in the bond furnace C3 | No annealing |
| Max. scan range z | <100Å to~0.3mm | 50Å to 262µm | 1 µm (can go up to 5 µm under special settings) |
| Resolution xy | up to 5900 data points per profile | down to 0.067 µm | Depending on scan size and number of samples per line and number of lines - accuracy better than 2% |
| Resolution z | 1Å or 25Å | 1Å, 10Å or 20Å | <1Å - accuracy better than 2% |
| Max. scan depth [µm] (as a function of trench width W) | 0.87(W[µm]-5µm) | 1.2(W[µm]-5µm) | ~1 with standard cantilever. |
| Tip radius | 5 µm 60o cone | 5 µm 45o cone | <12 nm on standard cantilever |
| Stress measurement | Can be done | Can be done | Cannot be done |
| Surface roughness | Can be done on a line scan | Can be done on a line scan | Can be done on a selected surface area |
Choose equipment
- Speedline manual spinner - For spinning of PMMA and Topas