Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Remove resist in the AOE

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Remove AZ resist in the AOE using the recipe Descum

Parameter Descum (also settings for TDESC10M 20241029)
Coil Power [W] 2000
Platen Power [W] 30
Platen temperature [oC] 0
O flow [sccm] 99
Pressure [mTorr] 10.0 (strike pressure 20.0 mTorr)


Typical results tested by bge@nanolab
AZ resist etch rate ~41 nm/s

BARC etching

I have tried once etching BARC with recipe SiO2_res:

Parameter Recipe: SiO2_res Recipe: Barcetch
Coil Power [W] 1300 400
Platen Power [W] 200 100
Platen temperature [oC] 0 0
He flow [sccm] 174 0
CF flow [sccm] 5 0
CF4 flow [sccm] 0 4
H flow [sccm] 4 20
Pressure [mTorr] 4 1
Etch rate in BARC [nm/sec] 2 1
Selectivity to DUV resist [Barc:resist] ? [1-2:1]