Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Nanoscale silicon nitride etch with SF6
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Nano scale etching of silicon nitride with SF6 plasma
Based on silicon etch recipe made by Henri Jansen.
| Parameter | Silicon nitride etch, platen only |
|---|---|
| SF6 (sccm) | 5 |
| Pressure (APC %) | 100 |
| Platen power (W) | 20 |
| Temperature (oC) | 20 |
- Silicon nitride etch down to Al2O3 with ZEP resist mask (180 nm), 12 min, made by Berit Herstrøm @Nanolab, 2022
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Good in several linewidth opening -
Good in open areas -
Fairly straight sidewalls
recipe tested by Marcus Hufe, July 2024
A full 100 mm wafer was etched on top of a 150 mm silicon wafer. The etch depth was measured by AFM to check for etch depth etch depth uniformity over the wafer:
- Centrum: 25 nm, delta 1½ nm (+/-)
- Nord: 25 nm d 1 nm
- South: 24 nm d 1 nm
- East: 24.5 d 1 nm
- West: 24 d 1 nm
The delta might be a bit higher if I take more measurement values and spread it out more … but should be +/- 2 nm, and the values are mainly 24-25 nm, with a spread mainly 23-26 nm.