Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE

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Si mask etch

Parameter	Recipe name: Si_etch (Given by SPTS)	Recipe name: Si_etch2 (optimized by Henri Jansen @nanolab 2018)
Coil Power [W]	800	800
Platen Power [W]	30	30
Platen temperature [^oC]	20	5
C $_{4}$ F $_{8}$ flow [sccm]	55	65
SF $_{6}$ flow [sccm]	75	35
Pressure [mTorr]	20	20

Results	Si_etch:Resist mask	Si_etch: Resist mask	Si_etch2: Resist mask
Si etch rate	~1.12 µm/min - tested by Yunhong Ding @fotonik	~1.68 µm/min - tested by bghe@nanolab (before nov. 2015)	0.24 µm/min - tested by Henri Jansen @nanolab (2018) 0.22-0.28 µm/min- tested by bghe@nanolab (Marts 2020)
Selectivity to photo resist	1:~2.6 - tested by Yunhong Ding @fotonik	1:~4 - tested by bghe@nanolab (before nov. 2015)	1:3 - tested by Henri Jansen @nanolab (2018) 1:1.3 - tested by bghe@nanolab (Marts 2020)
Etch rate in SiO2	~0.34 µm/min - tested by Yunhong Ding @fotonik	0.4 µm/min - tested by bghe@nanolab (before nov. 2015)	?
Profile [^o]	not tested	not tested`	see images
Images	.	.
Comments	The profile is supposed to be ~88dg but it has not been confirmed		See the work done by Henri Jansen: "Initial Si etches on AOE".
Etch rate in silicon rich nitride from furnace B2	Etched 119nm in 1 min - test by bghe@nanolab October 2015	.	?

Initial sample wafer as: Si/SiO2(15µm)/pSi(2µm)/Mir resist(2µm)

Etch time 10min: all the resist is gone

Si_etch2 7 min with new resist pattern (2µm)