Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Remove resist in the AOE

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Remove AZ resist in the AOE using the recipe Descum

Parameter	Descum
Coil Power [W]	2000
Platen Power [W]	30
Platen temperature [oC]	0
O$_{2}$ flow [sccm]	99
Pressure [mTorr]	10.0 (strike pressure 20.0 mTorr)

Typical results	tested by bge@nanolab
AZ resist etch rate	~41 nm/s

BARC etching

I have tried once etching BARC with recipe m_res_ny (now called SiO2_res):

Parameter	Recipe: SiO2_res	Recipe: Barcetch
Coil Power [W]	1300	400
Platen Power [W]	200	100
Platen temperature [oC]	0	0
He flow [sccm]	174	0
C$_{4}$F$_{8}$ flow [sccm]	5	0
CF4 flow [sccm]	0	4
H$_{2}$ flow [sccm]	4	20
Pressure [mTorr]	4	1
Etch rate in BARC [nm/sec]	2	1
Selectivity to DUV resist [Barc:resist]	?	[1-2:1]