Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride

LPCVD (Low Pressure Chemical Vapor Deposition) Silicon Nitride

At Danchip there are two LPCVD nitride furnaces for deposition of silicon nitride: A new furnace for deposition of stoichiometric nitride on 4" or 6" wafers and a older furnace for deposition of stoichiometric nitride and low stress nitride on 4" wafers. Both furnaces are Tempress horizontal furnaces.

The LPCVD silicon nitride deposition is a batch process, meaning that you can run a batch of up to 25-35 wafers at a time. The deposition takes place at temperatures of 780-835 degrees Celsius. The reactive gases are ammonia (NH₃) and dichlorsilane (SiH₂Cl₂). The LPCVD nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the old nitride furnace we have two standard silicon nitride processes: One for deposition of stoichiometric nitride (Si₃N₄) and one for deposition of low stress nitride (SNR). On the new nitride furnace we have two standard recipes for deposition of stoichiometric nitride: One for 4" wafers and one for 6" wafers.

To get information on how to operate the furnace please read the user manuals which are uploaded to LabManager on the machine page.

Process Knowledge

Please take a look at the process side for deposition of Silicon Nitride using LPCVD: Deposition of Silicon Nitride using LPCVD

Overview of the performance of LPCVD Silicon Nitride and some process related parameters

Purpose	Deposition of silicon nitride	Stoichiometry: Si₃N₄ SRN Si₃N₄: Stoichiometric nitride SRN: Silicon rich nitride (low stress nitride)
Performance	Film thickness	Si₃N₄:~50Å - ~3000Å SRN: ~50Å - ~10000Å Thicker layers can be deposited over more runs
	Step coverage	Good
	Film quality	Dense film Few defects
	Uniformity	New nitride furnace: Uniformity within wafer: ~ 3% Wafer-to-wafer uniformity: ~ 3% Run-to-run uniformity: ~ 3% Old nitride furnace:
Process parameter range	Process Temperature	780-835 ^oC The process temperature depends on the actual process
	Process pressure	80-230 mTorr
	Gas flows	Dichlorsilane (SiH $_{2}$ Cl $_{2}$ ): 10-120 sccm Ammonia (NH $_{3}$ ): 10-75 sccm The gas flows depends on the actual process
Substrates	Batch size	New nitride furnace: 1-25 4" or 6" wafers per run Old nitride furnace: 1-25 4" wafer per run Deposition on both sides of the substrate
Substrates	Substrate material allowed	Silicon wafers (new wafer from new box or RCA cleaned wafers) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) from furnaces in stack A or B in cleanroom 2 Quartz wafers (RCA cleaned)