Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE

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Si mask etch

Parameter	Recipe name: Si_etch
Coil Power [W]	800
Platen Power [W]	30
Platen temperature [oC]	20
C$_{4}$F$_{8}$ flow [sccm]	55
SF$_{6}$ flow [sccm]	75
Pressure [mTorr]	20

Typical results	Resist mask	Resist mask
Si etch rate	~1.12 µm/min - tested by Yunhong Ding @fotonik	~1.68 µm/min - tested by bge@danchip (before nov. 2015)
Selectivity to photo resist	1:~2.6 - tested by Yunhong Ding @fotonik	1:~4 - tested by bge@danchip (before nov. 2015)
Etch rate in SiO2	~0.34 µm/min - tested by Yunhong Ding @fotonik	0.4 µm/min - tested by bge@danchip (before nov. 2015)
Profile [o]	not tested	not tested
Images	.	.
Comments	The profile is supposed to be ~88dg but it has not been confirmed	.
Etch rate in silicon rich nitride from furnace B2	Etched 119nm in 1 min - test by bge@danchip October 2015	.