Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride

At the moment we have one LPCVD furnace for nitride depositions.

A few words about the furnace

The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si₃N₄) and one for deposition of low stress nitride (SNR). To get information on how to operate the furnace please read the manual which is uploaded to LabManager.

Process Knowledge

.	LPCVD
Stoichiometry	Si₃N₄ SRN SRN: Silicon Rich Nitride
Film thickness	Si₃N₄:~50Å - ~3000Å SRN: ~50Å - ~10000Å
Step coverage	Good
Film quality	Dense film Few defects
Process Temperature	800-835 ^oC
Batch size	1-25 4" wafer per run deposition on both sides of the substrate
Substrate material allowed	Silicon wafers with layers of silicon oxide or silicon (oxy)nitride Quartz wafers

Please take a look at the process side for deposition of Silicon Nitride using LPCVD: Deposition of Silicon Nitride using LPCVD

To the right you see a rough overview of the performance of LPCVD Silicon Nitride and some process related parameters.