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Plasma asher 1

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Recipe 1:
Note: Plasma asher was cold before use

O2 flow: 70 ml/min
N2 flow: 70 ml/min
Power: 150 W

Ashing time (min)	1	2	5	7	10	10
Etched Thickness (nm)	14.2	16.3	47.6	123.2	854.3	862.1

Recipe 2:
Note: Plasma asher was cold before use

O2 flow: 500 ml/min
N2 flow: 0 ml/min
Power: 500 W

Ashing time (min)	1	2	5	7	10	10
Etched Thickness (nm)	-	8.1	32.9	271.1	495.6	446.2

Descum tests on UV resists

Conny Hjort & Jesper Hanberg, September 2021

Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.

Recipe settings:
Note: plasma Asher was cold before use.

O2 flow: 70 ml/min
N2 flow: 70 ml/min

Power: 150 W

Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.

1,5 um AZ5214E resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	6,28	102,99	76,92	N/A	N/A

1,5 um AZ5214E resist placed horizontally in the carrier:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	63,03	143,32	304,29	372,59	N/A

1,5 um AZ701MiR resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	268,88	199,54	219,03	200,86	292,15

1,5 um AZ 2020nLOF resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	1,68	76,51	169,72	481,96	272,59

Plasma asher 2

Jitka Urbánková & Jesper Hanberg, December 2019

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.

recipe 1:

O2 flow: 100 ml/min
N2 flow: 100 ml/min
Power: 150 W

Ashing time (min)	1	2	3	4	6	7	8	9	10	12	14	15	20
Etched Thickness (nm)	8,7	5,1	12,5	6,2	31,8	86,0	25,7	46,8	38,3	49,7	59,4	140,1	360,7
Initial temperature (°C)	28	21	31	21	22	28	25	24	21	24	24	22	22

recipe 2:

O2 flow: 500 ml/min
N2 flow: 0 ml/min
Power: 200 W

Ashing time (min)	1	2	3	4	5	6	7	8	10	12	15	20
Etched Thickness (nm)	8,1	9,4	16,8	55,2	44,0	47,5	42,5	55,1	85,3	122,4	184,8	305,9
Initial temperature (°C)	22	21	21	22	22	22	21	21	20	21	21	22

A linear time dependence was observed after etching 7 minutes or more (recipe 2).

Plasma asher 3

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).

Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.

Testing different power settings:

Recipe settings:

O2 flow: 5 sccm
N2 flow: 0
Pressure: 0.2 mbar
Power: Varied

Experiment parameters:

	FW/REV	C2/C1	Power
recipe 1	50/0	52/31	50%
recipe 2	100/0	53/31	100%
recipe 3	20/0	51/34	20%

Testing different pressure settings:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	5	0,2
recipe 2	100/0	37/38	45	0,8

Ashing of AZ5214E resist:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	17	0,4
recipe 2	100/0	37/39	45	0,8