Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace

From LabAdviser

The C1 furnace can be used for dry oxidation of 4" and 6" wafers.

There is space for up to 30 wafers in the furnace at a time (including test and dummy wafers).

The maximum possible oxidation temperature is 1000oC, and the maximum allowed oxidation time is 23 hours.


Dry Oxidation uniformity for 6" wafers

A dry oxidation has been done with 30 6" wafers in the quartz boat in the furnace.

The following parameters were used for the oxidation:

  • Recipe: "DRY1100"
  • Oxidation time: 500 minutes
  • Annealing time: 20 minutes

After the oxidation, the oxide thickness was measured on all the wafers.

The graph below shows the measured oxide thickness as function of the wafer slot. Slot 1 is furthest inside the furnace, towards the service area.

The oxidation and measurements were done by Martin Ommen (former DTU Nanotech).

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