Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride

Deposition of Silicon Nitride can be done with either LPCVD, PECVD or sputter deposition.

Using LPCVD

LPCVD nitride can be made in the LPCVD nitride furnace. It is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-850 degrees celcius. The LPCVD nitride covers sidewalls well and the filmthickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si3N4) and one for deposition low stress nitride (SNR).

Using PECVD

PECVD nitride can be deposited in one of the PECVD systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees celcius