Specific Process Knowledge/Thermal Process/Dope with Boron

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Dope with boron

The furnace A1 Boron Drive-in and Pre-dep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.

The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.

All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done at a temperature of 1125 ^oC and a flow of 5 slm N₂ and 0.2 slm of O₂.

Boron profiles from SIMS
Pre-depostion for 1 hour at 1125 °C
Pre-depostion for 6 hour at 1125 °C
Pre-depostion for 16 hour at 1125 °C

Boron diffusion depth vs. pre-deposition time

Uniformity test

Purpose

To study the uniformity across af wafer that has been boron doped using a pre-deposition process and a short wet oxidation to oxidixe the boron phase layer in the Boron Predep and Drive-in furnace (A1) at DTU Danchip.

Experimental setup

3 phosphorous doped device wafers (n-type) were used. In the furnace 3 RCA-cleaned wafers were placed in the center of the boat with Boron source wafers (also RCA cleaned) with the front side facing the source wafers.A pre-deposition process was made for ½ hour at 1125 °C, then the source wafers were removed and the device wafers oxidized in a wet oxidation process at 950 °C for ½ hour. Finally the oxide was removed in BHF and one wafer was cut into small samples for SIMS measurements.

Result

The SIMS measurement shows a good uniformity

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