Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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{| border="1" cellspacing="0" cellpadding="3"  
==Process Knowledge==
 
 
{| border="1" cellspacing="0" cellpadding="3" align="right"
!  
!  
! LPCVD
! LPCVD
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*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
*SRN: ~50Å - ~10000Å
*SRN: ~50Å - ~10000Å
|-
|Process Temperature
|
*800-835 <sup>o</sup>C
|-
|-
|Step coverage
|Step coverage
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*Dense film
*Dense film
*Few defects
*Few defects
|-
|Process Temperature
|
*800-835 <sup>o</sup>C
|-
|-
|Batch size
|Batch size
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|}
|}


==Process Knowledge==
Please take a look at the process side for deposition of Silicon Nitride using LPCVD:
Please take a look at the process side for deposition of Silicon Nitride using LPCVD:
[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]]
[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]]
To the right you see a rough overview of the performance of LPCVD Silicon Nitride and some process related parameters.

Revision as of 13:43, 3 December 2007

At the moment we have one LPCVD furnace for nitride depositions.


A few words about the furnace

The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si3N4) and one for deposition of low stress nitride (SNR).

Process Knowledge

LPCVD
Stoichiometry
  • Si3N4
  • SRN

SRN: Silicon Rich Nitride

Film thickness
  • Si3N4:~50Å - ~3000Å
  • SRN: ~50Å - ~10000Å
Step coverage
  • Good
Film quality
  • Dense film
  • Few defects
Process Temperature
  • 800-835 oC
Batch size
  • 1-25 4" wafer per run
  • deposition on both sides of the substrate
Substrate material allowed
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers

Please take a look at the process side for deposition of Silicon Nitride using LPCVD: Deposition of Silicon Nitride using LPCVD

To the right you see a rough overview of the performance of LPCVD Silicon Nitride and some process related parameters.

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