Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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At the moment we have one LPCVD furnace for nitride depositions. | At the moment we have one LPCVD furnace for nitride depositions. | ||
==A few words about the furnace== | ==A few words about the furnace== | ||
[[image:Furnace_nitride1.jpg|350x350px|right]] | |||
The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition of low stress nitride (SNR). | The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition of low stress nitride (SNR). | ||
{| border="1" cellspacing="0" cellpadding="3 | {| border="1" cellspacing="0" cellpadding="3" | ||
! | ! | ||
! LPCVD | ! LPCVD | ||
Revision as of 13:22, 3 December 2007
At the moment we have one LPCVD furnace for nitride depositions.
A few words about the furnace
The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si3N4) and one for deposition of low stress nitride (SNR).
| LPCVD | |
|---|---|
| Stoichiometry |
SRN: Silicon Rich Nitride |
| Film thickness |
|
| Process Temperature |
|
| Step coverage |
|
| Film quality |
|
| Batch size |
|
| Substrate material allowed |
|
Process Knowledge
Please take a look at the process side for deposition of Silicon Nitride using LPCVD: Deposition of Silicon Nitride using LPCVD