Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace: Difference between revisions
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The C1 furnace can be used for dry oxidation of 4" and 6" wafers. | |||
There is space for up to 30 wafers in the furnace at a time (including test and dummy wafers). | |||
The maximum possible oxidation temperature is 1000<sup>o</sup>C, and the maximum allowed oxidation time is 23 hours. | |||
===Dry Oxidation uniformity for 6" wafers=== | |||
A dry oxidation has been done with 30 6" wafers in the quartz boat in the furnace. | |||
The following parameters were used for the oxidation: | |||
*Recipe: "DRY1100" | |||
*Oxidation time: 500 minutes | |||
*Annealing time: 20 minutes | |||
After the oxidation, the oxide thickness was measured on all the wafers. | |||
The graph below shows the measured oxide thickness as function of the wafer slot. Slot 1 is furthest inside the furnace, towards the service area. | |||
The oxidation and measurements were done by Martin Ommen (former DTU Nanotech). | |||
Revision as of 11:29, 26 August 2022
The C1 furnace can be used for dry oxidation of 4" and 6" wafers.
There is space for up to 30 wafers in the furnace at a time (including test and dummy wafers).
The maximum possible oxidation temperature is 1000oC, and the maximum allowed oxidation time is 23 hours.
Dry Oxidation uniformity for 6" wafers
A dry oxidation has been done with 30 6" wafers in the quartz boat in the furnace.
The following parameters were used for the oxidation:
- Recipe: "DRY1100"
- Oxidation time: 500 minutes
- Annealing time: 20 minutes
After the oxidation, the oxide thickness was measured on all the wafers.
The graph below shows the measured oxide thickness as function of the wafer slot. Slot 1 is furthest inside the furnace, towards the service area.
The oxidation and measurements were done by Martin Ommen (former DTU Nanotech).