Specific Process Knowledge/Back-end processing/Wire Bonder: Difference between revisions

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[[Image:TPTWireBonder.jpg|300x300px|thumb|TPT Wire Bonder, Packlab, Building 347, 2nd floor]]
[[Image:TPT-wirebonder.jpg|300x300px|thumb|TPT Wire Bonder, Packlab, Building 347, 2nd floor]]
[[Image:TPTwirebonder_wedge_ball.jpg|300x300px|thumb|Wire bondings: Left: wedge bonding - Right: ball bonding]]
[[Image:TPTwirebonder_wedge_ball.jpg|300x300px|thumb|Wire bondings: Left: wedge bonding - Right: ball bonding]]



Revision as of 13:30, 13 September 2013

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TPT Wire Bonder

The TPT Wire Bonder is bought i 2007. Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

TPT Wire Bonder, Packlab, Building 347, 2nd floor
Wire bondings: Left: wedge bonding - Right: ball bonding

TPT Wire Bonder

Ball Wire Bonder K&S 4524

The Ball Wire Bonder K&S 4524 is for high precision ball bonding. It is a semi-automatic wire bonder with good control of bond placement and bonding parameters.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

The Ball Wire Bonder K&S 4524

Ball Wire Bonder


Equipment performance and process related parameters

Equipment TPT Wire Bonder Ball Wire Bonder
Purpose
  • Al and Au 25µm wire bonding
  • Wedge and ball wire bonding
  • Au ribbon (100x20µm) bonding
    (we have tools and wire but it has not been tested)
  • Au 25µm wire bonding
  • Ball wire bonding
Performance
  • Manual operation
  • Wedge bonding:
    • recommended min. bonding area 200 µm
  • Ball bonding:
    • recommended min. bonding area 300 µm
    • recommended temperature 120 oC.
  • Semi-automatic and manual operation
  • Bond placement laser pointer
  • recommended min. bonding area 100 µm
  • recommended temperature 120 oC.
Substrates Allowed materials
  • Should be able to withstand the wire bonding temperature
  • Typical materials are: Alumina (Al2O3), AluminumNitride (AlN), std. circuit boards (FR4)