Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

Revision as of 13:24, 3 December 2007

At the moment we have one LPCVD furnace for nitride depositions.

A few words about the furnace

The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si₃N₄) and one for deposition of low stress nitride (SNR).

	LPCVD
Stoichiometry	Si₃N₄ SRN SRN: Silicon Rich Nitride
Film thickness	Si₃N₄:~50Å - ~3000Å SRN: ~50Å - ~10000Å
Process Temperature	800-835 ^oC
Step coverage	Good
Film quality	Dense film Few defects
Batch size	1-25 4" wafer per run deposition on both sides of the substrate
Substrate material allowed	Silicon wafers with layers of silicon oxide or silicon (oxy)nitride Quartz wafers

Process Knowledge

Please take a look at the process side for deposition of Silicon Nitride using LPCVD: Deposition of Silicon Nitride using LPCVD

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 ==A few words about the furnace==
-[[image:Furnace_nitride1.jpg|350x350px|right]]
+[[image:Furnace_nitride1.jpg|350x350px|left]]
 The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition of low stress nitride (SNR).
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