Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions
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==A4 Furnace Phosphor pre-dep== | ==A4 Furnace Phosphor pre-dep== | ||
[[Image: | [[Image:C4helstak.jpg|thumb|300x300px|A1 Boron drive in furnace: positioned in cleanroom 2]] | ||
A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula POCL3. | A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula POCL3. |
Revision as of 13:54, 26 November 2012
A4 Furnace Phosphor pre-dep
A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula POCL3.
A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
Purpose | Doping of Phosphor | |
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Performance |
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Process parameter range | Process Temperature |
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Process pressure |
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Gasses on the system |
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Substrates | Batch size |
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Substrate material allowed |
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Material NOT allowed |
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