Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch): Difference between revisions

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*Silicon (oxy)nitride
*Silicon (oxy)nitride
*Quartz
*Quartz
*Silicon mask etching
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
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*He: 0-500 sccm
*He: 0-500 sccm
*N<math>_2</math>: 0-1000 sccm
*N<math>_2</math>: 0-1000 sccm
*SF<math>_6</math>: 0-300 sccm
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates

Revision as of 14:13, 15 November 2010

Etching using the dry etch technique AOE (Advanced oxide etch)

AOE: positioned in cleanroom 2

The AOE can be used for etching silicon oxide, silicon (oxy)nitride and quartz. Look in the manuals for the AOE to see how to operate the machine (you can find the manuals in LabManager [1]).

Process information


A rough overview of the performance of AOE and some process related parameters

Purpose Dry etch of
  • Silicon oxide
  • Silicon (oxy)nitride
  • Quartz
  • Silicon mask etching
Performance Etch rates

~0.2-0.6 µm/min

Anisotropy
  • Typical profiles: 86-90 degrees
Process parameter range Process pressure
  • ~2-20 mTorr
Gas flows
  • CF: 0-40 sccm
  • O: 0-100 sccm
  • CF: 0-100 sccm
  • H: 0-30 sccm
  • He: 0-500 sccm
  • N: 0-1000 sccm
  • SF: 0-300 sccm
Substrates Batch size
  • 1 6" wafer per run (only when the system is setup to 6"
  • 1 4" wafer per run
  • 1 2" wafer per run (needs carrier)
  • Or several smaller pieces (needs carrier)
Substrate material allowed
  • Silicon with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Possible masking material
  • Photoresist/e-beam resist
  • Silicon/PolySi
  • Aluminium