Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

Revision as of 09:21, 30 November 2007

At the moment we have one LPCVD furnace for nitride depositions.

A few words about the furnace

The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-850 degrees Celsius. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si₃N₄) and one for deposition low stress nitride (SNR).

	LPCVD
Stoichiometry	Si₃N₄ SRN SRN: Silicon Rich Nitride
Film thickness	Si₃N₄:~50Å - ~3000Å SRN: ~50Å - ~10000Å
Process Temperature	800-835 ^oC
Step coverage	Good
Film quality	Dense film Few defects
Batch size	1-25 4" wafer per run deposition on both sides of the substrate
Substrate material allowed	Silicon wafers with layers of silicon oxide or silicon (oxy)nitride Quartz wafers

Process Knowledge

Deposition of Silicon Nitride using LPCVD

@@ Line 2: / Line 2: @@
 ==A few words about the furnace==
-The furnace is a Tempress horisontal furnace.
+The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-850 degrees Celsius. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition low stress nitride (SNR).
+{| border="1" cellspacing="0" cellpadding="3" align="center"
+!
+! LPCVD
+|-
+| Stoichiometry
+|
+*Si<sub>3</sub>N<sub>4</sub>
+*SRN
+SRN: Silicon Rich Nitride
+|-
+|Film thickness
+|
+*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
+*SRN: ~50Å - ~10000Å
+|-
+|Process Temperature
+|
+*800-835 <sup>o</sup>C
+|-
+|Step coverage
+|
+*Good
+|-
+|Film quality
+|
+*Dense film
+*Few defects
+|-
+|Batch size
+|
+*1-25 4" wafer per run
+*deposition on both sides of the substrate
+|-
+| Substrate material allowed
+|
+*Silicon wafers
+**with layers of silicon oxide or silicon (oxy)nitride
+*Quartz wafers
+|-
+|}
 ==Process Knowledge==
 [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]]