Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

Latest revision as of 18:06, 27 May 2025

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Polisher (CMP)

The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates. After CMP it is recommended to use the Post CMP Cleaner to clean the sample for slurry residues left by the CMP.

The user manual, user APV, technical information and contact information can be found in LabManager:

The Logitech Orbis (CMP) in LabManager

Equipment performance and process related parameters

Equipment		Polisher/Lapper
Purpose	Polishing of	Silicon SiO2
Performance	20x20mm substrate	Removal rate: 400nm/min Thickness accuracy: +/- ? µm Thickness homogeneity: +/- ? µm Roughness: +/- ? µm
Performance	100mm substrate	Removal rate: ~ 60 nm/min Thickness accuracy: ? µm Thickness homogeneity: ? µm Roughness: +/- ? µm
Process parameter range	Polishing liquid	SF1 Polishing Fluid
	Polishing cloths	Chemcloth Polishing Cloths
	Rotation	Plate Head/Puck
	Arm sweep	Polishing: 20% (inner) - 100% (outer)
Substrates	Sample size	one 20x20mm piece one 50 mm wafer one 2" wafer one 100 mm wafer one 150 mm wafer
	Allowed materials	Silicon Glass/Quartz

@@ Line 1: / Line 1: @@
-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP click here]'''
+{{cc-nanolab}}
+'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP click here]'''
+<br>
+<br>
 == Polisher (CMP) ==
-[[image:Cmp_picture.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper]]
+[[image:Cmp_picture.jpg|400px|right|thumb|The Logitech PM5 Polisher/Lapper in cleanroom A-5]]
-The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.
+The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates. After CMP it is recommended to use the '''[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/Post_CMP_Cleaner Post CMP Cleaner]''' to clean the sample for slurry residues left by the CMP.
@@ Line 16: / Line 17: @@
 <!-- give the link to the equipment info page in LabManager: -->
 [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager]
 ==Equipment performance and process related parameters==
@@ Line 28: / Line 28: @@
 !style="background:silver; color:black;" align="center" width="60"|Purpose
 |style="background:LightGrey; color:black"|
-Thinning of substrates of
+Polishing of
 |style="background:WhiteSmoke; color:black"|
-*InP
-*GaAs
 *Silicon
-*Metals
+*SiO2
-*Glass/Quartz
 <!-- |style="background:WhiteSmoke; color:black"|
 *Purpose 1
@@ Line 41: / Line 38: @@
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
-|style="background:LightGrey; color:black"| Thinning
+|style="background:LightGrey; color:black"| 20x20mm substrate
 |style="background:WhiteSmoke; color:black"|
-*Removal rate: 1-10µm/min
+*Removal rate: 400nm/min
-*Thickness accuracy: +/- 10 µm
+*Thickness accuracy: +/- ? µm
-*Thickness homogeneity: +/- 10 µm
+*Thickness homogeneity: +/- ? µm
 *Roughness: +/- ? µm
 <!-- |style="background:WhiteSmoke; color:black"|
@@ Line 52: / Line 49: @@
 *Performance range 3 -->
 |-
-|style="background:LightGrey; color:black"|Polishing
+|style="background:LightGrey; color:black"|100mm substrate
 |style="background:WhiteSmoke; color:black"|
-*Removal rate: ~1 µm/min
+*Removal rate: ~ 60 nm/min
 *Thickness accuracy: ? µm
 *Thickness homogeneity: ? µm
@@ Line 64: / Line 61: @@
 |style="background:LightGrey; color:black"|Polishing liquid
 |style="background:WhiteSmoke; color:black"|
-*Al2O3 (alumina) powder: 3, 9 or 20 µm
+*SF1 Polishing Fluid
-*Chemlox (for polishing)
-*SF1 Polishing Fluid (for polishing e.g. SiO2)
 |-
 |style="background:LightGrey; color:black"|Polishing cloths
 |style="background:WhiteSmoke; color:black"|
-*Chemcloth Polishing Cloths (for use with SF1 liquid)
+*Chemcloth Polishing Cloths
 |-
-|style="background:LightGrey; color:black"|Rotation speed
+|style="background:LightGrey; color:black"|Rotation
 |style="background:WhiteSmoke; color:black"|
-*Thinning: 5-20 rpm
+*Plate
-*Polishing: 5-80 rpm
+*Head/Puck
 |-
 |style="background:LightGrey; color:black"|Arm sweep
 |style="background:WhiteSmoke; color:black"|
-*Thinning: stationary
+*Polishing: 20% (inner) - 100% (outer)
-*Polishing: 12% (inner) - 80% (outer)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
@@ Line 89: / Line 83: @@
 *one 2" wafer
 *one 100 mm wafer
-*one 150mm wafer
+*one 150 mm wafer
 <!-- |style="background:WhiteSmoke; color:black"|
 *<nowiki>#</nowiki> small samples