Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
 
(45 intermediate revisions by 6 users not shown)
Line 1: Line 1:
==C1 Furnace Anneal Oxide==
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide click here]'''
[[Image:C1.JPG|thumb|300x300px|C1 Furnace Anneal Oxide: positioned in cleanroom 2]]


C1 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. The furnace is the only one there can handel 6" wafer.
''This page is written by DTU Nanolab  internal''


This furnace is the first furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that comes directly from PECVD1 (assuming they were very clean when entering PECVD1). Check the cross contamination chart. If you are in doubt, please ask one from the process engineer team.
[[Category: Equipment |Thermal C1]]
[[Category: Thermal process|C1]]
[[Category: Furnaces|C1]]
 
 
==Anneal-oxide furnace (C1)==
[[Image:C1.JPG|thumb|300x300px|Anneal-oxide furnace (C1). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]
 
The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.
 
The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.
 
Oxygen is used as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.
 
Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).
 
The oxidation and annealing temperature can be up to 1100 <sup>o</sup>C.
 
 
'''The user manual, technical information and contact information can be found in LabManager:'''
 
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide furnace (C1)]'''


==Process knowledge==
==Process knowledge==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*General information about oxidation. More information can be found on the [[Specific Process Knowledge/Thermal Process/Oxidation|oxidation page]]
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Wet oxidation in the C1 furnace. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace|here]]
<br clear="all" />
*Dry oxidation in the C1 furnace. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace|here]]  
*Annealing. More information can be found on the [[Specific Process Knowledge/Thermal Process/Annealing|annealing page]]


==Overview of the performance of Anneal Oxide furnace and some process related parameters==
==Overview of the performance of Anneal Oxide furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Oxidation and annealing
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|Oxidation:
*Oxidation of 100 mm and 150 mm wafers
*Dry
*Annealing of 100 mm and 150 mm wafers
*Wet: with bubbler (water steam + N<math>_2</math>)
|style="background:WhiteSmoke; color:black"|
Annealing:
*Using N<sub>2</sub>
Oxidation:
*Dry oxidation using O<sub>2</sub>
*Wet oxidation using H<sub>2</sub>O vapour generated by a RASIRC steamer
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to make it thicker)
*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)
*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker)
*Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*800-1150 <sup>o</sup>C
*800-1100 <sup>o</sup>C
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm (no vacuum)
|-
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Annealing: N<math>_2</math>:5 sccm
*N<sub>2</sub>: 0-10 slm
*Dry oxidation: O<math>_2</math>:5 sccm
*O<sub>2</sub>: 0-10 slm
*Wet oxidation: N<math>_2</math>:5 sccm
*Steamer flow : 0-25 liter/minute
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 4" and 6" wafer (or 2" wafers) per run
*1-30 100 mm or 150 mm wafers (or 50 mm wafers)
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*New silicon wafers  
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Silicon wafers with layers of silicon oxide or silicon nitride (RCA cleaned)
*Quartz wafers (RCA cleaned)
*Wafers from the LPCVD furnaces
*From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
*Wafers from PECVD4
|-  
|-  
|}
|}

Latest revision as of 16:37, 14 February 2024

Feedback to this page: click here

This page is written by DTU Nanolab internal


Anneal-oxide furnace (C1)

Anneal-oxide furnace (C1). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal

The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.

The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.

Oxygen is used as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 oC).

The oxidation and annealing temperature can be up to 1100 oC.


The user manual, technical information and contact information can be found in LabManager:

Anneal-oxide furnace (C1)

Process knowledge

  • General information about oxidation. More information can be found on the oxidation page
  • Wet oxidation in the C1 furnace. More information can be found here
  • Dry oxidation in the C1 furnace. More information can be found here
  • Annealing. More information can be found on the annealing page

Overview of the performance of Anneal Oxide furnace and some process related parameters

Purpose
  • Oxidation of 100 mm and 150 mm wafers
  • Annealing of 100 mm and 150 mm wafers

Annealing:

  • Using N2

Oxidation:

  • Dry oxidation using O2
  • Wet oxidation using H2O vapour generated by a RASIRC steamer
Performance Film thickness
  • Dry SiO2: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)
  • Wet SiO2: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 oC)
Process parameter range Process Temperature
  • 800-1100 oC
Process pressure
  • 1 atm (no vacuum)
Gas flows
  • N2: 0-10 slm
  • O2: 0-10 slm
  • Steamer flow : 0-25 liter/minute
Substrates Batch size
  • 1-30 100 mm or 150 mm wafers (or 50 mm wafers)
Substrate materials allowed
  • New silicon wafers
  • Silicon wafers with layers of silicon oxide or silicon nitride (RCA cleaned)
  • Wafers from the LPCVD furnaces
  • Wafers from PECVD4
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide&oldid=49384"