Specific Process Knowledge/Bonding/Fusion bonding: Difference between revisions

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==Fusion Bonding==
==Fusion Bonding==


Fusion bonding is a weaker bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000<math>\rm{^o}</math>C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO2 layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunetly not with the old DANCHIP nitride furnace.   
Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000°C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO<math>_2</math> layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DTU Nanolab nitride furnace.   
 
Please be advised that it is notoriously difficult to use the EVG NIL bond aligner, due to its manual nature it is strongly advised to book extra time to do alignment. However alignment of +-2 microns is possible by very exprienced users. The alignment marks (on the masks) are to be positioned at y=0 and x=+-40mm for 4", for optimal result. It is possible to use both backside alignment and IR alignment however IR alignmant is more accurate, since only one aligning is used. However it is very important to use dobbelt polished wafers to have enough IR light to see the patterns. 


Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.
Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.
===Bonding procedure===
*Clean the wafers with [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]] clean.

Latest revision as of 08:24, 6 February 2023

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Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

Fusion Bonding

Fusion bonding is a relative weak bond between e.g. two clean Si wafers. It is absolutely necessary for the wafers to be very clean and to be annealed at 1000°C afterwards to avoid and minimize defects. Fusion bonding can be made as a Si to Si direct bonding or with SiO layers in between. It is also possible to use nitride in between but it should be close to 100% particle free. We have good experience with Sintef but unfortunately not with the old DTU Nanolab nitride furnace.

Try and put a fusion bonding as early in a process sequence as possible, since during annealing is not possible to have any kind of metals on your wafer. Furthermore the thermal budget could drive dopants further into the wafer than wanted.

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