Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions
Jump to navigation
Jump to search
| Line 27: | Line 27: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 atm | *1 atm | ||
* | *Vacuum | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Gasses on the system | |style="background:LightGrey; color:black"|Gasses on the system | ||
| Line 37: | Line 37: | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *One 100 mm wafer (or 50 wafer) per run | ||
*Small samples | *Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide) | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
Revision as of 13:03, 15 January 2014
Feedback to this page: click here
Jipelec - Rapid Thermal Processing
The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).
The user manual, technical information and contact information can be found in LabManager:
| Purpose | RTP annealing | |
|---|---|---|
| Process parameter range | Process Temperature |
|
| Process pressure |
| |
| Gasses on the system |
| |
| Substrates | Batch size |
|
| Substrate material allowed |
A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials)
|