Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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*1-30 100 mm wafers (or 50 mm wafers)  
*1-30 100 mm wafers (or 50 mm wafers)  
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| style="background:LightGrey; color:black"|Substrate materiasl allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
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*Silicon wafers with alluminium.
*Silicon wafers with alluminium.

Revision as of 09:51, 13 January 2014

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Aluminium Anneal furnace (C4)

Aluminium Anneal furnace (C4). Positioned in cleanroom 2

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers with aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose
  • Annealing of wafers with aluminium
  • Oxidation of wafers with aluminium
Process parameter range Process Temperature
  • 400-500 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 5 sccm
  • O2: 5 sccm
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers)
Substrate materials allowed
  • Silicon wafers with alluminium.
  • Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
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