Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Revision history

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curprev 09:3109:31, 6 February 2024‎ Paphol talk contribs‎ 9,805 bytes −1‎ →‎Process information
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curprev 13:1813:18, 26 June 2023‎ Pevo talk contribs‎ 9,780 bytes −36‎ No edit summary
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curprev 09:5109:51, 6 June 2023‎ Paphol talk contribs‎ 9,709 bytes +86‎ No edit summary

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curprev 15:4715:47, 3 December 2019‎ Pevo talk contribs‎ 9,227 bytes +6‎ No edit summary
curprev 15:4415:44, 3 December 2019‎ Pevo talk contribs‎ 9,221 bytes −2‎ →‎Rules for storage and RCA cleaning of wafers to the B stack furnaces
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curprev 13:1713:17, 31 August 2018‎ Pevo talk contribs‎ 8,998 bytes −2‎ →‎Equipment performance and process related parameters

curprev 12:3112:31, 14 May 2018‎ Pevo talk contribs‎ 9,000 bytes −417‎ →‎Deposition of Silicon Nitride using LPCVD

curprev 14:5514:55, 13 February 2017‎ Paphol talk contribs‎ 9,417 bytes 0‎ →‎Equipment performance and process related parameters
curprev 14:5414:54, 13 February 2017‎ Paphol talk contribs‎ 9,417 bytes 0‎ →‎Equipment performance and process related parameters

curprev 10:5110:51, 30 June 2016‎ Choi talk contribs‎ 8,885 bytes 0‎ →‎From April 2016 the processed on the LPCVD nitride furnaces have been changed, so that only stoichiometric nitride is deposited in the 4" nitride furnace, and only low stress (silicon rich) nitride is deposited in the 6" nitride furnace

curprev 13:5613:56, 25 August 2014‎ Bghe talk contribs‎ 8,570 bytes +2‎ No edit summary
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curprev 14:1414:14, 12 November 2013‎ Knil talk contribs‎ 5,911 bytes 0‎ →‎LPCVD (Low Pressure Chemical Vapor Deposition) Silicon Nitride

curprev 10:1610:16, 11 October 2013‎ Pevo talk contribs‎ 5,911 bytes +230‎ No edit summary

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