View source for Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si deposition using PECVD

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{| border="1" cellspacing="2" cellpadding="2" 
|-style="background:Black; color:White"
!|Recipe
!|Dep. rate [nm/min]
!|RI
!|Unif. [%]
!|Stress [MPa]
!|Comments
!|SiH4 [sccm]
!|N2 [sccm]
!|B2H6
!|PH3
!|Pressure [mTorr]
!|Power [W]
!|Load
!|Tune
!|Time [mm:ss]
!|Tested
 
 
|-
|aSi_1<!-- Recipe -->
|~6 nm/min<!-- Dep. rate [nm/min] -->
|?<!-- RI -->
|?<!-- Unif. [%] -->
|? <!-- Stress [MPa] -->
|<!-- Comments -->
|100<!-- SiH4 [sccm] -->
|0<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- PH3 -->
|200 mTorr<!-- Pressure [mTorr] -->
|10HF<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Time [mm:ss] -->
|From logbook June 2019<!--Tested -->
|-

|}