View source for Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Nanoscale silicon nitride etch with SF6

=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=

=Nano scale etching of silicon nitride with SF6 plasma=
''Based on silicon etch recipe made by Henri Jansen.''

{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''silicon nitride etch'''
|-
! Parameter
! width="200" | Silicon nitride etch, platen only
|-
! SF<sub>6</sub> (sccm)
| 5
|-
! Pressure (APC %)
| 100
|-
! Platen power (W)
| 20
|-
! Temperature (<sup>o</sup>C)
| 20 
|-
|}

<gallery caption="Silicon nitride etch down to Al2O3 with ZEP resist mask (180 nm), 12 min, made by Berit Herstrøm @Nanolab, 2022" perrow="3" widths="400px" heights="300px">
File:S015446_07.jpg|Good in several linewidth opening
File:S015446_11.jpg|Good in open areas
File:S015446_13.jpg|Fairly straight sidewalls
</gallery>

===The recipe was tested by Marcus Hufe, July 2024===
A full 100 mm wafer was etched on top of a 150 mm silicon wafer. The etch depth was measured by AFM to check for etch depth etch depth uniformity over the wafer:
*Center: 25 nm, delta 1½ nm (+/-)
*North: 25 nm d 1 nm 
*South: 24 nm d 1 nm 
*East: 24.5 d 1 nm 
*West: 24 d 1 nm 

The delta might be a bit higher if I take more measurement values and spread it out more … but should be +/- 2 nm, and the values are mainly 24-25 nm, with a spread mainly 23-26 nm.