View source for Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE

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<!-- Page reviewed 9/8-2022 jmli -->





==Si mask etch==


{| border="2" cellspacing="2" cellpadding="3" 
|-style="background:Black; color:White"
!Parameter
!Recipe name: Si_etch
!Recipe name: Si_etch2 ''(optimized by Henri Jansen @nanolab 2018)''
|-
|Coil Power [W]
|800
|800
|-
|Platen Power [W]
|30
|30
|-
|Platen temperature [<sup>o</sup>C]
|20
|5
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|55
|65
|-
|SF<sub>6</sub> flow [sccm]
|75
|35
|-
|Pressure [mTorr]
|20
|20
|-
|}


{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"

!Results
! Si_etch:Resist mask
! Si_etch: Resist mask
! Si_etch2: Resist mask
|-
|Si etch rate 
|'''~1.12 µm/min'''    - tested by Yunhong Ding @fotonik
|'''~1.68 µm/min'''    - tested by bghe@nanolab (before nov. 2015)
|
'''0.24 µm/min'''     - tested by Henri Jansen @nanolab (2018)<br>
'''0.22-0.28 µm/min'''- tested by bghe@nanolab (Marts 2020)
|
|-
|Selectivity to photo resist
|'''1:~2.6'''    - tested by Yunhong Ding @fotonik
|'''1:~4'''      - tested by bghe@nanolab (before nov. 2015)
|
'''1:3'''       - tested by Henri Jansen @nanolab (2018)<br>
'''1:1.3'''     - tested by bghe@nanolab (Marts 2020)
|-
|Etch rate in SiO2 
|'''~0.34 µm/min'''   - tested by Yunhong Ding @fotonik
|'''0.4 µm/min'''     - tested by bghe@nanolab (before nov. 2015)
|?
|-
|Profile [<sup>o</sup>]
|not tested
|not tested`
|[[#Profile_images_for_Si_etch2| see images]]
|-
|Images
|.
|.
|
|-
|Comments
|The profile is supposed to be ~88dg but it has not been confirmed 
|
|See the work done by Henri Jansen with variation of the C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub> ratio: 
*[[Media:ibsen initial si etches on AOE.pdf |"Initial Si etches on AOE"]].
|-
|Etch rate in silicon rich nitride from furnace B2
|Etched 119nm in 1 min - test by bghe@nanolab October 2015
|.
|?
|-

|}

==Profile images for Si_etch2==
''Done by Berit bghe@nanolab marts 2020''

Initial sample wafer as:
Si/SiO2(15µm)/pSi(2µm)/Mir resist(2µm)


===Apox1: Si_etch2 10 min (with old resist)===

Etch time 10min: all the resist is gone
<gallery widths="400px" heights="300px" perrow="2">
Image:apox_pSi_etch_1_04.jpg
Image:apox_pSi_etch_1_08.jpg
Image:apox_pSi_etch_1_09.jpg
Image:apox_pSi_etch_1_10.jpg

</gallery>

===Apox2: Si_etch2 7 min (with new resist)===
Si_etch2 7 min with new resist pattern (2µm)
<gallery widths="400px" heights="300px" perrow="2">

Image:apox_pSi_etch_2_01.jpg
Image:apox_pSi_etch_2_06.jpg
Image:apox_pSi_etch_2_11.jpg
Image:apox_pSi_etch_2_14.jpg

</gallery>