View source for Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace


The C1 furnace can be used for dry oxidation of 4" and 6" wafers. 

There is space for up to 30 wafers in the furnace at a time (including test and dummy wafers). 

The maximum possible oxidation temperature is 1000<sup>o</sup>C, and the maximum allowed oxidation time is 23 hours. 


===Dry Oxidation uniformity for 6" wafers===

A dry oxidation has been done with 30 6" wafers in the quartz boat in the furnace. 

The following parameters were used for the oxidation:
*Recipe: "DRY1100"
*Oxidation time: 500 minutes
*Annealing time: 20 minutes

After the oxidation, the oxide thickness was measured on all the wafers. 

The graph below shows the measured oxide thickness as function of the wafer slot. Slot 1 is furthest inside the furnace, towards the service area. 

The oxidation and measurements were done by Martin Ommen (former DTU Nanotech).