View source for Specific Process Knowledge/Thin film deposition/PECVD

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[[Category: Equipment|Thin film PECVD]]
[[Category: Thin Film Deposition|PECVD]]

==PECVD Plasma Enhanced Chemical Vapor Deposition==
[[image:Cluster2x.jpg|200x200px|right|thumb|PECVD2 (part of cluster2) - positioned in cleanroom C-1]]
[[image:PECVD3a.jpg|200x200px|right|thumb|PECVD3 - positioned in cleanroom A-1]]
We have two PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.

PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.

All though PECVD2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.

'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:''' 
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[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=17  PECVD2 in LabManager] <br/>
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=106  PECVD3 in LabManager]

== Process information on PECVD2 and PECVD3==
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD|Recipes for deposition of silicon oxides]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride|Recipes on for deposition of silicon nitride and silicon oxynitride]]
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==Overview of the performance of PECVD thin films and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10" 

!colspan="2" border="none" style="background:silver; color:black;" align="center"|PECVD 
|style="background:WhiteSmoke; color:black"|<b>PECVD2</b>
|style="background:WhiteSmoke; color:black"|<b>PECVD3</b>

|-
!style="background:silver; color:black;" align="left"|Purpose 
|style="background:LightGrey; color:black"|Deposition of dielectrica 
|style="background:WhiteSmoke; color:black"|
*Silicon oxide
*Silicon nitride
*Silicon oxynitride
*PBSG (Phosphorous Boron doped Silica Glass)
*Silicon oxide doped with Germanium
|
*Silicon oxide
*Silicon nitride
*Silicon oxynitride
*PBSG (Phosphorous Boron doped Silica Glass)
*Silicon oxide doped with Germanium
|-
!style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
*~10nm - 30µm
|
*~10nm - 30µm
|-
|style="background:LightGrey; color:black"|Index of refraction
|style="background:WhiteSmoke; color:black"|
*~1.4-2.1
|
*~1.4-2.1
|-
|style="background:LightGrey; color:black"|Step coverage
|style="background:WhiteSmoke; color:black"|
*In general: Not so good
*PBSG: Floats at 1000<sup>o</sup>C
|
*In general: Not so good
*PBSG: Floats at 1000<sup>o</sup>C
|-
|style="background:LightGrey; color:black"|Film quality
|style="background:WhiteSmoke; color:black"|
*Not so dense film
*Hydrogen will be incorporated in the films
|
*Not so dense film
*Hydrogen will be incorporated in the films
|-
!style="background:silver; color:black" align="left" rowspan="3"  valign="top" |Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
*300 <sup>o</sup>C
|
*300 <sup>o</sup>C
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*~200-900 mTorr
|
*~200-900 mTorr
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
*SiH<math>_4</math>:0-50 sccm
*N<math>_2</math>O:0-4260 sccm
*NH<math>_3</math>:0-740 sccm
*N<math>_2</math>:0-3000 sccm
*GeH<math>_4</math>:0-6.00 sccm
*5%PH<math>_3</math>:0-100 sccm
*3%B<math>_2</math>H<math>_6</math>:0-1000 sccm
|
*SiH<math>_4</math>:0-60 sccm
*N<math>_2</math>O:0-3000 sccm
*NH<math>_3</math>:0-1000 sccm
*N<math>_2</math>:0-3000 sccm
*GeH<math>_4</math>:0-6.00 sccm
*5%PH<math>_3</math>:0-99 sccm
*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm
|-
!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*One 4" wafer per run
*One 6" wafer per run
*Or several smaler pieces on carrier wafer
*Deposition on one side of the substrate

|
*1-3 4" wafer per run
*1 6" wafer per run
*Or several smaler pieces
*Deposition on one side of the substrate
|-
| style="background:LightGrey; color:black"|Materials allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers, Quartz (fused silica) wafers,
**with layers of silicon oxide or silicon (oxy)nitride
*III-V wafers (on special carriers)
|
*Silicon wafers, Quarts (fused silica) wafers
**with layers of silicon oxide or silicon (oxy)nitride
**Layers of Al
**Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask! 
|- 
|}